NTGD4161PT1G ON Semiconductor, NTGD4161PT1G Datasheet

NTGD4161PT1G

Manufacturer Part Number

NTGD4161PT1G

Description

MOSFET P-CH DUAL 30V 2.3A 6-TSOP

Manufacturer

ON Semiconductor

Datasheet

1.NTGD4161PT1G.pdf (5 pages)

Specifications of NTGD4161PT1G

Fet Type

2 P-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

160 mOhm @ 2.1A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

1.5A

Vgs(th) (max) @ Id

3V @ 250µA

Gate Charge (qg) @ Vgs

7.1nC @ 10V

Input Capacitance (ciss) @ Vds

281pF @ 15V

Power - Max

600mW

Mounting Type

Surface Mount

Package / Case

SC-74-6

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTGD4161PT1G

Manufacturer:

ON Semiconductor

Quantity:

500

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTGD4161PT1G

Manufacturer:

Quantity:

30 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

NTGD4161PT1G

Manufacturer:

ON/安森美

Quantity:

20 000

Company:

H&T Electronics

Part Number:

NTGD4161PT1G

Quantity:

150

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NTGD4161P

Power MOSFET

−30 V, −2.3 A, Dual P−Channel, TSOP−6

Features

•

Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. When surface mounted to an FR4 board using 1 in. pad size

2. When surface mounted to an FR4 board using minimum recommended

MAXIMUM RATINGS

September, 2006 − Rev. 1

THERMAL RESISTANCE RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage

Continuous Drain

Current (Note 1)

Power Dissipation

(Note 1)

Continuous Drain

Current (Note 2)

Power Dissipation (Note 2)

Pulsed Drain Current

Operating Junction and Storage Temperature

Source Current (Body Diode)

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

Junction−to−Ambient − Steady State (Note 1)

Junction−to−Ambient − Steady State (Note 2)

Junction−to−Ambient − t ≤ 5 s (Note 1)

Junction−to−Case − Steady State (Note 1)

Fast Switching Speed

Low Gate Charge

Low R

Independently Connected Devices to Provide Design Flexibility

This is a Pb−Free Device

Load Switch

Battery Protection

Portable Devices Like PDAs, Cellular Phones and Hard Drives

(Cu. area = 1.2 in

pad size (Cu. area = 0.047 in

DS(on)

Parameter

[1 oz] including traces)

= 25°C unless otherwise noted)

Steady

State

t ≤ 5 s

Steady

State

t ≤ 5 s

Steady

State

)

= 10 ms

= 25°C

= 85°C

= 25°C

= 85°C

= 25°C

Symbol

DSS

STG

qJA

qJC

−55 to

Value

Max

225

−2.1

−1.5

−2.3

−1.5

−1.1

−0.8

115

−30

±20

−10

150

260

1.1

1.3

0.6

°C/W

Unit

°C

*Date Code orientation may vary depending upon

†For information on tape and reel specifications,

NTGD4161PT1G

manufacturing location.

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

(BR)DSS

−30 V

CASE 318G

STYLE 13

Device

(Note: Microdot may be in either location)

TSOP−6

(MOSFET1)

ORDERING INFORMATION

P−Channel

http://onsemi.com

(Pb−Free)

= Specific Device Code

= Date Code*

= Pb−Free Package

Package

TSOP−6

280 mW @ −4.5 V

160 mW @ −10 V

Publication Order Number:

MARKING DIAGRAM

DS(on)

3000 / Tape & Reel

S8 MG

(MOSFET2)

P−Channel

Max

Shipping

NTGD4161P/D

†

Related parts for NTGD4161PT1G

NTGD4161PT1G Summary of contents

Page 1

... Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping NTGD4161PT1G TSOP−6 3000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D ...

Page 2

ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance CHARGES AND CAPACITANCES ...

Page 3

TYPICAL PERFORMANCE CURVES 5 −10 V −4 −V , DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.5 0.4 0 125° 25°C J 0.1 ...

Page 4

C RSS DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 0 0.7 0.6 0 150°C J 0.4 0 125°C J ...

Page 5

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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