IRF7757TRPBF International Rectifier, IRF7757TRPBF Datasheet
IRF7757TRPBF
Specifications of IRF7757TRPBF
Related parts for IRF7757TRPBF
IRF7757TRPBF Summary of contents
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... Lead-Free l Description ® HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex- tremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that Inter- national Rectifier is well known for, signer with an extremely efficient and reliable device for battery and load management ...
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IRF7757PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...
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VGS TOP 7.5V 5.0V 4.5V 3.5V 3.0V 100 2.5V 2.0V BOTTOM 1.5V 10 1.5V 1 20µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100. ...
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IRF7757PbF 10000 0V, C iss = rss = oss = Ciss 1000 Coss Crss 100 ...
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T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL ...
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IRF7757PbF 0.05 0. 4.8A 0.03 0.02 2.0 3.0 4.0 5.0 V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. ...
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250µA 0.7 0.5 0.3 -75 -50 - Temperature ( °C ) Fig 15. Typical Threshold Voltage Vs. Junction Temperature www.irf.com 120 110 100 ...
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IRF7757PbF E INDEX MARK ccc e bbb aaa C 8 SURF LEAD AS S IGNMENTS ...
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EXAMPLE: T HIS IS AN IRF7702 DAT E CODE (YWW) TSSOP-8 Tape and Reel Information FEED DIRECT ION WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com PART NUMBER 7702 LOT CODE ...