IRF8910TRPBF International Rectifier, IRF8910TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF8910TRPBF
• Description: MOSFET 2N-CH 20V 10A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF8910TRPBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 2.55V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 960pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 18.3 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 10 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 7.4 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF8910PBFTR; IRF8910TRPBF; IRF8910TRPBFTR

6
R G
20V
VGS
Fig 14. Unclamped Inductive Test Circuit
V DS
40.00
30.00
20.00
10.00
Fig 12. On-Resistance vs. Gate Voltage
0.00
Fig 16. Switching Time Test Circuit
t p
I AS
D.U.T
3
0.01 Ω
L
Duty Factor < 0.1%
Pulse Width < 1µs
V GS, Gate -to -Source Voltage (V)
4
V
GS
and Waveform
15V
5
DRIVER
V
DS
+
- V DD
6
A
T J = 25°C
I
AS
T J = 125°C
D.U.T
7
L
D
V
8
DD
I D = 10A
+
t p
-
9
10
V
(BR)DSS
90%
V
10%
V
DS
Fig 17. Switching Time Waveforms
80
70
60
50
40
30
20
10
GS
0
25
Fig 13. Maximum Avalanche Energy
Fig 15. Gate Charge Test Circuit
t
Starting T J , Junction Temperature (°C)
12V
d(on)
V
GS
Same Type as D.U.T.
50
Current Regulator
.2µF
t
vs. Drain Current
r
50KΩ
3mA
Current Sampling Resistors
75
.3µF
I
G
t
d(off)
100
TOP
BOTTOM 8.2A
D.U.T.
www.irf.com
I
D
t
f
125
+
-
V
DS
I D
3.4A
4.9A
150