IRF8910TRPBF International Rectifier, IRF8910TRPBF Datasheet - Page 6

MOSFET 2N-CH 20V 10A 8-SOIC

IRF8910TRPBF

Manufacturer Part Number
IRF8910TRPBF
Description
MOSFET 2N-CH 20V 10A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF8910TRPBF

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
13.4 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
2.55V @ 250µA
Gate Charge (qg) @ Vgs
11nC @ 4.5V
Input Capacitance (ciss) @ Vds
960pF @ 10V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual
Transistor Polarity
Dual N-Channel
Resistance Drain-source Rds (on)
18.3 mOhms
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
10 A
Power Dissipation
2 W
Mounting Style
SMD/SMT
Gate Charge Qg
7.4 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF8910PBFTR
IRF8910TRPBF
IRF8910TRPBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF8910TRPBF
Manufacturer:
International Rectifier
Quantity:
44 348
Part Number:
IRF8910TRPBF
Manufacturer:
IR
Quantity:
20 000
6
R G
20V
VGS
Fig 14. Unclamped Inductive Test Circuit
V DS
40.00
30.00
20.00
10.00
Fig 12. On-Resistance vs. Gate Voltage
0.00
Fig 16. Switching Time Test Circuit
t p
I AS
D.U.T
3
0.01 Ω
L
Duty Factor < 0.1%
Pulse Width < 1µs
V GS, Gate -to -Source Voltage (V)
4
V
GS
and Waveform
15V
5
DRIVER
V
DS
+
- V DD
6
A
T J = 25°C
I
AS
T J = 125°C
D.U.T
7
L
D
V
8
DD
I D = 10A
+
t p
-
9
10
V
(BR)DSS
90%
V
10%
V
DS
Fig 17. Switching Time Waveforms
80
70
60
50
40
30
20
10
GS
0
25
Fig 13. Maximum Avalanche Energy
Fig 15. Gate Charge Test Circuit
t
Starting T J , Junction Temperature (°C)
12V
d(on)
V
GS
Same Type as D.U.T.
50
Current Regulator
.2µF
t
vs. Drain Current
r
50KΩ
3mA
Current Sampling Resistors
75
.3µF
I
G
t
d(off)
100
TOP
BOTTOM 8.2A
D.U.T.
www.irf.com
I
D
t
f
125
+
-
V
DS
I D
3.4A
4.9A
150

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