SI7212DN-T1-E3 Vishay, SI7212DN-T1-E3 Datasheet - Page 5
![MOSFET DUAL N-CH 30V 1212-8](/photos/5/42/54273/pkg_5882_sml.jpg)
SI7212DN-T1-E3
Manufacturer Part Number
SI7212DN-T1-E3
Description
MOSFET DUAL N-CH 30V 1212-8
Manufacturer
Vishay
Series
TrenchFET®r
Specifications of SI7212DN-T1-E3
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
36 mOhm @ 6.8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4.9A
Vgs(th) (max) @ Id
1.6V @ 250µA
Gate Charge (qg) @ Vgs
11nC @ 4.5V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8 Dual
Transistor Polarity
N Channel
Continuous Drain Current Id
6.8A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
39mohm
Rds(on) Test Voltage Vgs
12V
Threshold Voltage Vgs Typ
1.6V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI7212DN-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7212DN-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73128.
Document Number: 73128
S09-1815-Rev. F, 14-Sep-09
0.01
0.1
2
1
10
-4
Duty Cycle = 0.5
Single Pulse
0.2
0.1
0.02
0.05
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
Square Wave Pulse Duration (s)
10
-2
10
-1
Vishay Siliconix
Si7212DN
www.vishay.com
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