FDS6994S Fairchild Semiconductor, FDS6994S Datasheet - Page 8
![MOSFET N-CH DUAL 30V 8SOIC](/photos/5/42/54236/261-8-soic_sml.jpg)
FDS6994S
Manufacturer Part Number
FDS6994S
Description
MOSFET N-CH DUAL 30V 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®, SyncFET™r
Datasheet
1.FDS6994S.pdf
(9 pages)
Specifications of FDS6994S
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
21 mOhm @ 6.9A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6.9A, 8.2A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 5V
Input Capacitance (ciss) @ Vds
800pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.021 Ohm @ 10 V @ Q1
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
6.9 A @ Q1 or 8.2 A @ Q2
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
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Part Number:
FDS6994S
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FSC
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50 000
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IR
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1 050
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Part Number:
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Typical Characteristics
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky
diode in parallel with a MOSFET. Figure 22 shows the
reverse recovery characteristic of the FDS6994S.
For comparison purposes, Figure 23 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6690A).
Figure 23. Non-SyncFET (FDS6690A) body
Figure 22. FDS6994S SyncFET body diode
reverse recovery characteristic.
diode reverse recovery characteristic.
10nS/DIV
10nS/DIV
(continued) This section copied from FDS6984S datasheet
0V
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase
the power in the device.
leakage versus drain-source voltage and
Figure 24. SyncFET body diode reverse
0.00001
0.0001
0.001
0.01
0.1
0
temperature.
V
DS
, REVERSE VOLTAGE (V)
10
125
25
o
o
C
C
20
FDS6994S Rev C2(W)
30