FDG6318PZ Fairchild Semiconductor, FDG6318PZ Datasheet - Page 5

• Manufacturer Part Number: FDG6318PZ
• Description: MOSFET P-CH DUAL 20V SC70-6
• Manufacturer: Fairchild Semiconductor

Specifications of FDG6318PZ

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 780 mOhm @ 500mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 500mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.62nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 85.4pF @ 10V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.78 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 1.1 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 0.5 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
Typical Characteristic
Breakdown Voltage vs Junction Temperature
1.10
1.05
1.00
0.95
Figure 11. Normalized Drain to Source
-80
I
D
= 250 A
-40
T
J
, JUNCTION TEMPERATURE (
Figure 13. Gate Charge Waveforms for Constant Gate Currents
0
40
10
(Continued) T
8
6
4
2
0
0
80
V
DD
o
C)
= -10V
120
A
0.5
= 25°C unless otherwise noted
Qg, GATE CHARGE (nC)
160
1.0
200
100
WAVEFORMS IN
DESCENDING ORDER:
10
Figure 12. Capacitance vs Drain to Source
5
I
I
0.1
D
D
= -0.5A
= -0.1A
V
GS
1.5
C
RSS
= 0V, f = 1MHz
-V
= C
DS
, DRAIN TO SOURCE VOLTAGE (V)
GD
2.0
Voltage
1
C
OSS
C
ISS
= C
C
DS
GS
+ C
FDG6318PZ Rev. B
10
+ C
GD
GD
20