FDG6318PZ Fairchild Semiconductor, FDG6318PZ Datasheet - Page 5
![MOSFET P-CH DUAL 20V SC70-6](/photos/5/42/54217/261-sc-70-6_sml.jpg)
FDG6318PZ
Manufacturer Part Number
FDG6318PZ
Description
MOSFET P-CH DUAL 20V SC70-6
Manufacturer
Fairchild Semiconductor
Specifications of FDG6318PZ
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
780 mOhm @ 500mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
500mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
1.62nC @ 4.5V
Input Capacitance (ciss) @ Vds
85.4pF @ 10V
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Dual
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.78 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
1.1 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
0.5 A
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDG6318PZ
Manufacturer:
FAIRCHILD
Quantity:
30 000
©2003 Fairchild Semiconductor Corporation
Typical Characteristic
Breakdown Voltage vs Junction Temperature
1.10
1.05
1.00
0.95
Figure 11. Normalized Drain to Source
-80
I
D
= 250 A
-40
T
J
, JUNCTION TEMPERATURE (
Figure 13. Gate Charge Waveforms for Constant Gate Currents
0
40
10
(Continued) T
8
6
4
2
0
0
80
V
DD
o
C)
= -10V
120
A
0.5
= 25°C unless otherwise noted
Qg, GATE CHARGE (nC)
160
1.0
200
100
WAVEFORMS IN
DESCENDING ORDER:
10
Figure 12. Capacitance vs Drain to Source
5
I
I
0.1
D
D
= -0.5A
= -0.1A
V
GS
1.5
C
RSS
= 0V, f = 1MHz
-V
= C
DS
, DRAIN TO SOURCE VOLTAGE (V)
GD
2.0
Voltage
1
C
OSS
C
ISS
= C
C
DS
GS
+ C
FDG6318PZ Rev. B
10
+ C
GD
GD
20