FDC6301N Fairchild Semiconductor, FDC6301N Datasheet - Page 4

• Manufacturer Part Number: FDC6301N
• Description: IC FET DGTL N-CH DUAL 25V SSOT6
• Manufacturer: Fairchild Semiconductor

Specifications of FDC6301N

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 220mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 9.5pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 0.25 S
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: - 0.5 V to 8 V
• Continuous Drain Current: 0.22 A
• Power Dissipation: 900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 220mA
• Drain Source Voltage Vds: 25V
• On Resistance Rds(on): 5ohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 850mV
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC6301NTR

Typical Electrical Characteristics (continued)
0.05
0.02
0.01
5
4
3
2
1
0
0.5
0.2
0.1
Figure 7. Gate Charge Characteristics
0
Figure 9. Maximum Safe Operating Area.
1
0.5
I = 0.2A
0.05
0.02
0.01
D
R
0.5
0.2
0.1
SINGLE PULSE
0.0001
1
JA
V
0.1
T = 25°C
=See note 1b
GS
A
1
D = 0.5
= 2.7V
0.2
0.1
V
0.05
0.02
0.01
Single Pulse
DS
0.2
Q
, DRAI N-SOURCE VOLTAGE (V)
g
2
, GATE CHARGE (nC)
Figure 11. Transient Thermal Response Curve
Note: Thermal characterization performed using the conditions described in note 1b.Transient thermal
response will change depending on the circuit board design.
0.001
0.3
5
V
0.4
DS
10
= 5V
.
0.01
10V
15
0.5
15V
25
0.6
35
0.1
t , TIME (sec)
1
3 0
2 0
1 0
5
3
2
1
0.1
5
4
3
2
1
0
0.01
Figure 8. Capacitance Characteristics.
Figure 10. Single Pulse Maximum Power
f = 1 MHz
V
.
GS
1
= 0V
Dissipation.
0.1
V
DS
0.5
, DRAIN TO SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
P(pk)
1
T - T
Duty Cycle, D = t / t
10
J
R
R
1
JA
t
1
A
JA
2
(t) = r(t) * R
t
= P * R
2
= See Note 1b
JA
1
R
10
5
SINGLE PULSE
(t)
JA
JA
2
100
T = 25°C
=See note 1b
A
1 0
FDC6301N Rev.D
C oss
C rss
C iss
300
100
2 5
300