FDC6301N Fairchild Semiconductor, FDC6301N Datasheet - Page 4
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FDC6301N
Manufacturer Part Number
FDC6301N
Description
IC FET DGTL N-CH DUAL 25V SSOT6
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDC6301N.pdf
(5 pages)
Specifications of FDC6301N
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4 Ohm @ 400mA, 4.5V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
220mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
0.7nC @ 4.5V
Input Capacitance (ciss) @ Vds
9.5pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
6-SSOT, SuperSOT-6
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
0.25 S
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
- 0.5 V to 8 V
Continuous Drain Current
0.22 A
Power Dissipation
900 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
220mA
Drain Source Voltage Vds
25V
On Resistance Rds(on)
5ohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
850mV
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDC6301NTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDC6301N
Manufacturer:
Fairchild Semiconductor
Quantity:
37 261
Part Number:
FDC6301N
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDC6301N-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Electrical Characteristics (continued)
0.05
0.02
0.01
5
4
3
2
1
0
0.5
0.2
0.1
Figure 7. Gate Charge Characteristics
0
Figure 9. Maximum Safe Operating Area.
1
0.5
I = 0.2A
0.05
0.02
0.01
D
R
0.5
0.2
0.1
SINGLE PULSE
0.0001
1
JA
V
0.1
T = 25°C
=See note 1b
GS
A
1
D = 0.5
= 2.7V
0.2
0.1
V
0.05
0.02
0.01
Single Pulse
DS
0.2
Q
, DRAI N-SOURCE VOLTAGE (V)
g
2
, GATE CHARGE (nC)
Figure 11. Transient Thermal Response Curve
Note: Thermal characterization performed using the conditions described in note 1b.Transient thermal
response will change depending on the circuit board design.
0.001
0.3
5
V
0.4
DS
10
= 5V
.
0.01
10V
15
0.5
15V
25
0.6
35
0.1
t , TIME (sec)
1
3 0
2 0
1 0
5
3
2
1
0.1
5
4
3
2
1
0
0.01
Figure 8. Capacitance Characteristics.
Figure 10. Single Pulse Maximum Power
f = 1 MHz
V
.
GS
1
= 0V
Dissipation.
0.1
V
DS
0.5
, DRAIN TO SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
P(pk)
1
T - T
Duty Cycle, D = t / t
10
J
R
R
1
JA
t
1
A
JA
2
(t) = r(t) * R
t
= P * R
2
= See Note 1b
JA
1
R
10
5
SINGLE PULSE
(t)
JA
JA
2
100
T = 25°C
=See note 1b
A
1 0
FDC6301N Rev.D
C oss
C rss
C iss
300
100
2 5
300