SI4618DY-T1-E3 Vishay, SI4618DY-T1-E3 Datasheet - Page 12

• Manufacturer Part Number: SI4618DY-T1-E3
• Description: MOSFET N-CH DUAL 30V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4618DY-T1-E3

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 17 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.7A, 11.4A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 44nC @ 10V
• Input Capacitance (ciss) @ Vds: 1535pF @ 15V
• Power - Max: 1.38W, 2.35W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 7.4A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 14mohm
• Rds(on) Test Voltage Vgs: 16V
• Threshold Voltage Vgs Typ: 2.5V
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.017 Ohms, 0.01 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 6.7 A, 11.4 A
• Power Dissipation: 1.38 W, 2.35 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4618DY-T1-E3TR

Document Number: 71192
11-Sep-06
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
e
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
D
DIM
A
A
B
C
D
E
H
S
e
h
L
q
1
B
A
1
A
1.35
0.10
0.35
0.19
4.80
3.80
5.80
0.25
0.50
0.44
Min
0°
MILLIMETERS
0.25 mm (Gage Plane)
1.27 BSC
8
1
7
2
Max
1.75
0.20
0.51
0.25
5.00
4.00
6.20
0.50
0.93
0.64
8°
6
3
L
5
4
E
S
h x 45
0.0075
0.053
0.004
0.014
0.189
0.150
0.228
0.010
0.020
0.018
Min
H
0°
0.050 BSC
INCHES
Package Information
C
0.069
0.008
0.020
0.010
0.196
0.157
0.244
0.020
0.037
0.026
Max
8°
q
Vishay Siliconix
All Leads
0.101 mm
0.004"
www.vishay.com
1