SI4925BDY-T1-E3 Vishay, SI4925BDY-T1-E3 Datasheet - Page 2
![MOSFET P-CH DUAL 30V 5.3A 8-SOIC](/photos/5/42/54248/pkg_5498_sml.jpg)
SI4925BDY-T1-E3
Manufacturer Part Number
SI4925BDY-T1-E3
Description
MOSFET P-CH DUAL 30V 5.3A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI4925BDY-T1-E3.pdf
(6 pages)
Specifications of SI4925BDY-T1-E3
Transistor Polarity
P-Channel
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
25 mOhm @ 7.1A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5.3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 10V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.025 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.3 A
Power Dissipation
1100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-7.1A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
25mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4925BDY-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4925BDY-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
31 598
Company:
Part Number:
SI4925BDY-T1-E3
Manufacturer:
SAMSUNG
Quantity:
15
Part Number:
SI4925BDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si4925BDY
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
b
40
30
20
10
0
0
1
a
a
V
DS
Output Characteristics
a
- Drain-to-Source Voltage (V)
J
V
= 25 °C, unless otherwise noted
GS
2
= 10 V thru 5 V
a
Symbol
R
3
V
I
t
t
I
I
GS(th)
D(on)
DS(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
g
Q
t
t
t
SD
rr
fs
gs
gd
r
f
g
3 V, 2 V
4 V
4
V
DS
V
I
D
DS
≅ - 1 A, V
= - 15 V, V
I
F
= - 30 V, V
V
V
V
V
V
V
V
V
= - 1.7 A, dI/dt = 100 A/µs
5
GS
I
DS
DS
GS
DS
DS
S
DD
DS
= - 1.7 A, V
Test Conditions
= V
= - 4.5 V, I
= - 5 V, V
= - 10 V, I
= - 10 V, I
= 0 V, V
= - 30 V, V
= - 15 V, R
GEN
GS
GS
GS
, I
= - 10 V, I
= - 10 V, R
D
GS
= 0 V, T
GS
= - 250 µA
D
D
D
GS
GS
L
= ± 20 V
= - 7.1 A
= - 7.1 A
= - 5.5 A
= - 10 V
= 15 Ω
= 0 V
= 0 V
J
D
= 55 °C
g
= - 7.1 A
= 6 Ω
40
30
20
10
0
0
1
Min.
- 40
- 1
V
Transfer Characteristics
GS
- Gate-to-Source Voltage (V)
2
0.020
0.033
Typ.
- 0.8
5.4
8.9
20
33
12
60
34
30
S09-0869-Rev. D, 18-May-09
9
Document Number: 72001
3
T
C
± 100
0.025
0.041
Max.
- 1.2
25 °C
- 25
= - 55 °C
- 3
- 1
50
15
20
90
50
60
4
125 °C
Unit
nC
nA
µA
ns
Ω
V
A
S
V
5