SI7900AEDN-T1-E3 Vishay, SI7900AEDN-T1-E3 Datasheet - Page 6
![MOSFET DUAL N-CH 20V 1212-8](/photos/5/42/54273/pkg_5882_sml.jpg)
SI7900AEDN-T1-E3
Manufacturer Part Number
SI7900AEDN-T1-E3
Description
MOSFET DUAL N-CH 20V 1212-8
Manufacturer
Vishay
Series
TrenchFET®r
Specifications of SI7900AEDN-T1-E3
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
26 mOhm @ 8.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
900mV @ 250µA
Gate Charge (qg) @ Vgs
16nC @ 4.5V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8 Dual
Transistor Polarity
N Channel
Continuous Drain Current Id
8.5A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
36mohm
Rds(on) Test Voltage Vgs
12V
Threshold Voltage Vgs Typ
900mV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI7900AEDN-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI7900AEDN-T1-E3
Manufacturer:
VISHAY
Quantity:
4 189
Part Number:
SI7900AEDN-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
PowerPAK
Document Number: 71656
Revison: 03-May-10
ECN: S10-0951-Rev. J, 03-May-10
DWG: 5882
DIM.
A1
D1
D2
D3
D4
D5
E1
E2
E3
E4
K1
L1
W
M
D
H
A
b
c
E
e
K
L
θ
Notes:
1.
2
3.
4
1
®
Inch will govern
Dimensions exclusive of mold gate burrs
Dimensions exclusive of mold flash and cutting burrs
1212-8, (SINGLE/DUAL)
E1
2
E
MIN.
0.97
0.00
0.23
0.23
3.20
2.95
1.98
0.48
3.20
2.95
1.47
1.75
0.35
0.30
0.30
0.06
0.15
0°
W
8
5
L1
MILLIMETERS
0.125 TYP.
0.47 TYP.
0.34 TYP.
0.65 BSC
0.86 TYP.
2.3 TYP.
NOM.
1.04
0.30
0.28
3.30
3.05
2.11
3.30
3.05
1.60
1.85
0.41
0.43
0.13
0.25
-
-
-
-
Z
Detail Z
MAX.
A1
1.12
0.05
0.41
0.33
3.40
3.15
2.24
0.89
3.40
3.15
1.73
1.98
0.51
0.56
0.20
0.36
12°
-
2
0.038
0.000
0.009
0.009
0.126
0.116
0.078
0.019
0.126
0.116
0.058
0.069
0.014
0.012
0.012
0.002
0.006
MIN.
0°
H
Package Information
Backside View of Single Pad
Backside View of Dual Pad
H
H
0.0185 TYP.
0.090 TYP.
0.013 TYP.
0.034 TYP.
0.005 TYP.
0.026 BSC
E3
E3
INCHES
NOM.
0.041
0.012
0.011
0.130
0.120
0.083
0.130
0.120
0.063
0.073
0.016
0.017
0.005
0.010
E2
E2
D2
D1
E4
E4
-
-
-
-
Vishay Siliconix
K
K
L
L
www.vishay.com
2
3
4
2
3
4
1
1
MAX.
0.044
0.002
0.016
0.013
0.134
0.124
0.088
0.035
0.134
0.124
0.068
0.078
0.020
0.022
0.008
0.014
12°
-
1