FDC6312P Fairchild Semiconductor, FDC6312P Datasheet - Page 3
![MOSFET P-CH DUAL 20V SSOT-6](/photos/5/42/54216/261-supersot-6_sml.jpg)
FDC6312P
Manufacturer Part Number
FDC6312P
Description
MOSFET P-CH DUAL 20V SSOT-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDC6312P.pdf
(5 pages)
Specifications of FDC6312P
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
115 mOhm @ 2.3A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.3A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
7nC @ 4.5V
Input Capacitance (ciss) @ Vds
467pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
6-SSOT, SuperSOT-6
Configuration
Dual
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.115 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
5.3 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
2.3 A
Power Dissipation
960 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDC6312P
FDC6312PTR
FDC6312PTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDC6312P
Manufacturer:
MICROCHIP
Quantity:
1 000
Company:
Part Number:
FDC6312P
Manufacturer:
Fairchild Semiconductor
Quantity:
89 663
Part Number:
FDC6312P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDC6312P-NL
Manufacturer:
AD
Quantity:
3 089
Part Number:
FDC6312P-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Characteristics
6
5
4
3
2
1
0
6
5
4
3
2
1
0
0.5
0
Figure 3. On-Resistance Variation with
1.6
1.4
1.2
0.8
0.6
Figure 1. On-Region Characteristics.
1
V
-50
Figure 5. Transfer Characteristics.
DS
V
= 5V
GS
V
I
D
GS
-3.5V
= -4.5V
= -2.3A
-25
=-4.5V
0.5
1
-V
-V
GS
DS
, GATE TO SOURCE VOLTAGE (V)
T
0
J
, DRAIN-SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
Temperature.
-2.5V
1.5
1
25
-3.0V
-2.0V
50
T
A
= -55
1.5
2
-1.8V
75
o
C
25
100
o
o
C)
C
-1.5V
2.5
125
2
o
C
125
150
2.5
3
Figure 6. Body Diode Forward Voltage Variation
0.35
0.25
0.15
0.05
0.3
0.2
0.1
0.0001
0.001
0.01
2.25
1.75
1.25
0.75
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
0.1
with Source Current and Temperature.
2.5
1.5
1
10
1
2
1
0
0
Drain Current and Gate Voltage.
V
V
GS
GS
= 0V
= -1.8V
Gate-to-Source Voltage.
0.2
-V
1
-V
SD
2
GS
, BODY DIODE FORWARD VOLTAGE (V)
T
, GATE TO SOURCE VOLTAGE (V)
A
= 125
-2.0V
T
0.4
-I
A
2
D
= 25
o
, DRAIN CURRENT (A)
C
o
-2.5V
C
3
25
0.6
3
T
o
A
C
= 125
-3.0V
-55
o
0.8
C
o
4
C
-3.5V
4
FDC6312P Rev C (W)
I
D
1
5
= -0.8 A
-4.5V
1.2
6
5