FDC6312P Fairchild Semiconductor, FDC6312P Datasheet
FDC6312P
Manufacturer Part Number
FDC6312P
Description
MOSFET P-CH DUAL 20V SSOT-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDC6312P.pdf
(5 pages)
Specifications of FDC6312P
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
115 mOhm @ 2.3A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.3A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
7nC @ 4.5V
Input Capacitance (ciss) @ Vds
467pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
6-SSOT, SuperSOT-6
Configuration
Dual
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.115 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
5.3 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
2.3 A
Power Dissipation
960 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDC6312P
FDC6312PTR
FDC6312PTR
Available stocks
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Part Number
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Price
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FDC6312P
Manufacturer:
MICROCHIP
Quantity:
1 000
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Part Number:
FDC6312P
Manufacturer:
Fairchild Semiconductor
Quantity:
89 663
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FDC6312P
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FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
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AD
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Part Number:
FDC6312P-NL
Manufacturer:
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Quantity:
20 000
FDC6312P
Dual P-Channel 1.8V PowerTrench Specified MOSFET
General Description
These P-Channel 1.8V specified MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low
gate charge for superior switching performance.
Applications
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
Power management
Load switch
J
DSS
GSS
D
, T
JA
JC
Device Marking
STG
SuperSOT
.312
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D1
S1
TM
-6
D2
– Continuous
– Pulsed
FDC6312P
Device
G1
Parameter
S2
G2
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1)
Features
–2.3 A, –20 V. R
High performance trench technology for extremely
SuperSOT
low R
smaller than standard SO-8); low profile (1mm thick)
DS(ON)
TM
4
5
6
-6 package: small footprint (72%
Tape width
R
R
DS(ON)
DS(ON)
DS(ON)
12mm
-55 to +150
Ratings
–2.3
0.96
–20
130
0.9
0.7
–7
60
= 115 m @ V
= 155 m @ V
= 225 m @ V
8
January 2001
3
2
1
GS
GS
GS
FDC6312P Rev C (W)
3000 units
= –4.5 V
= –2.5 V
= –1.8 V
Quantity
Units
C/W
C/W
W
V
V
A
C
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Datasheet:
FDC6312P Summary of contents
Page 1
... Reel Size 13’’ January 2001 = 115 –4.5 V DS(ON 155 –2.5 V DS(ON 225 –1.8 V DS(ON package: small footprint (72 Ratings Units – –2.3 A –7 0.96 W 0.9 0.7 -55 to +150 C C/W 130 C/W 60 Tape width Quantity 12mm 3000 units FDC6312P Rev C (W) ...
Page 2
... Min Typ Max Units –20 V –11 mV/ C –1 A 100 nA –100 nA –0.4 –0.9 –1 mV 115 m 116 155 166 225 112 150 –7 A 5.3 S 467 4 1.0 nC 0.8 nC –0.8 A –0.7 –1 180°/W when mounted on a minimum pad. FDC6312P Rev C (W) ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = -1.8V -2.0V -2.5V -3.0V -3.5V -4. DRAIN CURRENT ( -0 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDC6312P Rev C ( 1.2 ...
Page 4
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec 1MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 180°C 25° 100 t , TIME (sec) 1 Power Dissipation. R ( 180°C/W JA P(pk ( Duty Cycle 100 FDC6312P Rev C (W) 20 1000 1000 ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...