IRG4PC40FD International Rectifier, IRG4PC40FD Datasheet
IRG4PC40FD
Specifications of IRG4PC40FD
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IRG4PC40FD Summary of contents
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... Mounting Torque, 6- Screw. Thermal Resistance Parameter R Junction-to-Case - IGBT JC R Junction-to-Case - Diode JC R Case-to-Sink, flat, greased surface CS R Junction-to-Ambient, typical socket mount JA Wt Weight www.irf.com IRG4PC40FD G TM ultrafast, n-cha nn el 300 (0.063 in. (1.6mm) from case) Min. ------ ------ ------ ----- ------ PD 91464B Fast CoPack IGBT 600V CES V 1 ...
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... IRG4PC40FD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown VoltageS 600 (BR)CES Temperature Coeff. of Breakdown Voltage ---- (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage ---- GE(th) J Forward Transconductance Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop FM I Gate-to-Emitter Leakage Current ...
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... Fig Typical Output Characteristics www.irf.com 1 f, Frequency (kHz) (Load Current = I of fundamental) RMS 15V Fig Typical Transfer Characteristics IRG4PC40FD Duty c ycle 25° 90°C sink G ate driv e as spe cified Turn-o n losse s include effe cts of rev erse reco very issipation = 35W 150° 25° ...
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... IRG4PC40FD ase Tem perature (°C) C Fig Maximum Collector Current vs. Case Temperature 0 0 .05 SIN 0 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 2 15V G E 80µs PULSE WIDTH 2.0 1.5 1 -60 -40 - Junction Temperature (°C) Fig Typical Collector-to-Emitter Voltage vs. Junction Temperature ectangular Pulse Duration (sec) ...
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... R , Gate Resistance ( G Fig Typical Switching Losses vs. Gate Resistance www.irf.com SHORTED Fig Typical Gate Charge vs 0 -60 -40 ) Fig Typical Switching Losses vs. IRG4PC40FD = 400V = 27A Total Gate Charge (nC) g Gate-to-Emitter Voltage = 10 = 15V = 480V I = 54A 27A 14A C - Junction Temperature (°C) J Junction Temperature ...
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... IRG4PC40FD 150° 480V 15V Collector-to-Emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current ° ° ° 0.8 1.2 1.6 2.0 Fo rwa ltag e Drop - 125 ° TIN Collecto r-to-E m itter V oltage ( Fig Turn-Off SOA 2 ...
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... V = 200V 125° 25° 30A 15A 5. /dt - (A/µs) f Fig Typical Reverse Recovery vs ° ° . /µ Fig Typical Stored Charge vs. di www.irf.com IRG4PC40FD ° ° Fig Typical Recovery Current vs ° ° . /dt Fig Typical 5. /µ / / /µs) f /dt vs. di /dt (rec ...
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... IRG4PC40FD Same ty pe device as D .U.T. 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining d( d(off) f Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Fig. 18d - µ S ...
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... µ www.irf.com D.U. 480V IRG4PC40FD 480V @25° ...
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... IRG4PC40FD Q Repetitive rating: V =20V; pulse width limited by maximum junction temperature (figure 20 =80%( =20V, L=10µ CES GE S Pulse width 80µs; duty factor 0.1%. T Pulse width 5.0µs, single shot (. (. (. (. . . CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...