SGB06N60 Infineon Technologies, SGB06N60 Datasheet
SGB06N60
Specifications of SGB06N60
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SGB06N60 Summary of contents
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... Soldering temperature (reflow soldering, MSL1) 2 J-STD-020 and JESD-022 1) Allowed number of short circuits: <1000; time between short circuits: >1s. for target applications Marking C CE(sat)150° 2.3V G06N60 150 C Symbol jmax - SGB06N60 PG-TO-263-3-2 (D²-PAK) (TO-263AB) Package PG-TO-263-3-2 Value 600 6 -55...+150 245 Rev ...
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... Allowed number of short circuits: <1000; time between short circuits: >1s. Symbol Conditions unless otherwise specified Symbol Conditions (one layer thick) copper area for 2 SGB06N60 Max. Value 1.85 40 Value min. Typ. max. 600 - = 1.7 2.0 2.4 - 2.3 2 700 = 100 = 4.2 - 350 420 - Rev. 2.2 Unit K/W Unit - Nov 06 ...
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... =150 C j Symbol Conditions Energy losses include E “tail” and diode reverse recovery SGB06N60 Value Unit min. typ. max 220 264 - 0.110 0.127 mJ - 0.105 0.137 - 0.215 0.263 Value Unit min. typ. max 248 298 - ...
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... 10A 1A 0.1A 1V 100kHz V CE Figure 2. Safe operating area ( 15A 10A 5A 0A 25°C 125°C Figure 4. Collector current as a function of case temperature (V 15V SGB06N60 200 s 1ms DC 10V 100V 1000V , - COLLECTOR EMITTER VOLTAGE = 150 50°C 75°C 100°C 125° CASE TEMPERATURE ...
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... V CE Figure 6. Typical output characteristics (T = 150 C) j 4.0V 3.5V -55°C 3.0V 2.5V 2.0V 1.5V 1.0V 8V 10V -50°C Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V SGB06N60 =20V GE 15V 13V 11V COLLECTOR EMITTER VOLTAGE I = 12A 0°C 50°C 100°C 150°C ...
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... 0/+15V Dynamic test circuit in Figure E) 5.5V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0V 150°C -50°C Figure 12. Gate-emitter threshold voltage as a function of junction temperature = 0/+15V 0.25mA SGB06N60 t d(off d(on 100 150 R , GATE RESISTOR G = 150 400V 6A, C max. 0°C 50° ...
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... Dynamic test circuit in Figure E) D=0 K/W ts 0.2 0.1 0. K/W 0. 0.01 E off - K/W 150°C 1µs Figure 16. IGBT transient thermal impedance as a function of pulse width = 0/+15V SGB06N60 and E include losses 100 150 R , GATE RESISTOR G = 150 400V 6A 0.705 0.0341 0.561 3.74E-3 0.583 3.25E single pulse ...
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... GE 100A 80A 60A 40A 20A 0A 14V 15V 10V 12V V GE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (V 600V SGB06N60 C iss C oss C rss 10V 20V 30V - EMITTER VOLTAGE 14V 16V 18V 20V , - GATE EMITTER VOLTAGE = 150 C) j Rev ...
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... PG-TO263-3-2 9 SGB06N60 Rev. 2.2 Nov 06 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses SGB06N60 ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Stray capacity =180nH =250pF. Rev. 2.2 Nov 06 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. SGB06N60 11 Rev. 2.2 Nov 06 ...