GT20J321(Q) Toshiba, GT20J321(Q) Datasheet - Page 2

• Manufacturer Part Number: GT20J321(Q)
• Description: IGBT DUAL 600V 20A TO-220
• Manufacturer: Toshiba

Specifications of GT20J321(Q)

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.45V @ 15V, 20A
• Current - Collector (ic) (max): 20A
• Power - Max: 45W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

Electrical Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Switching time
Switching loss
Peak forward voltage
Reverse recovery time
Note 1: Switching time measurement circuit and input/output waveforms
Note 2: Switching loss measurement waveforms
−V
0
0
GE
Characteristics
V
V
I
GE
CE
C
R
Turn-on delay time
Rise time
Turn-on time
Turn-off delay time
Fall time
Turn-off time
Turn-on switching
loss
Turn-off switching
loss
G
I
C
90%
E
L
off
V
CE
V
(Ta = 25°C)
CC
V
V
Symbol
GE (OFF)
t
t
CE (sat)
I
I
d (on)
d (off)
C
GES
E
E
CES
t
t
V
t
on
off
t
t
ies
on
off
rr
r
f
F
10%
0
0
V
V
I
I
V
Inductive Load
V
V
I
I
C
C
F
F
GE
CE
CE
CC
GG
= 20 A, V
= 20 A, di/dt = −100 A/μs
= 2 mA, V
= 20 A, V
V
V
= 600 V, V
= 10 V, V
I
= ±20 V, V
= 300 V, I
= +15 V, R
GE
E
CE
C
on
2
t
d (off)
GE
GE
Test Condition
CE
10%
GE
C
5%
= 0
GE
= 15 V
CE
= 5 V
G
= 20 A
= 0, f = 1 MHz
= 33 Ω
= 0
= 0
90%
t
off
t
f
90%
10%
(Note 1)
(Note 2)
t
d (on)
Min
3.5
10%
10%
―
―
―
―
―
―
―
―
―
―
―
―
―
―
3000
Typ.
0.06
0.04
0.17
0.24
0.04
0.34
0.40
0.43
100
2.0
t
―
―
―
―
t
on
r
90%
GT20J321
2006-11-01
±500
2.45
Max
1.0
6.5
2.1
10%
―
―
―
―
―
―
―
―
―
―
Unit
mA
mJ
nA
pF
μs
ns
V
V
V