STGY50NC60WD STMicroelectronics, STGY50NC60WD Datasheet - Page 9

• Manufacturer Part Number: STGY50NC60WD
• Description: IGBT N-CH 110A 600V MAX247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGY50NC60WD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.6V @ 15V, 40A
• Current - Collector (ic) (max): 110A
• Power - Max: 278W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: MAX247™
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 110 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 110A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 260W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-7489-5; STGY50NC60WD

STGY50NC60WD
Figure 13. Turn-off SOA
120
110
100
Figure 14. Forward voltage drop vs. forward
90
80
70
60
50
40
30
20
10
0
0
IFM(A)
1
current
(Typical values)
(Typical values)
Tj=125°C
Tj=125°C
2
(Maximum values)
(Maximum values)
Tj=125°C
Tj=125°C
Electrical characteristics
3
VFM(V)
4
(Maximum values)
Tj=25°C
5
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