IXGT32N60BD1 IXYS, IXGT32N60BD1 Datasheet - Page 3

• Manufacturer Part Number: IXGT32N60BD1
• Description: IGBT 60A 600V TO-268
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGT32N60BD1

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.3V @ 15V, 32A
• Current - Collector (ic) (max): 60A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 32
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.3
• Tfi, Typ, Tj=25°c, Igbt, (ns): 85
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.2
• Rthjc, Max, Igbt, (°c/w): 0.62
• If, Tj=110°c, Diode, (a): 32
• Rthjc, Max, Diode, (ºc/w): 1
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

© 2003 IXYS All rights reserved
100
100
100
80
60
40
20
80
60
40
20
80
60
40
20
0
0
0
Fig. 3. Saturation Voltage Characteristics
0
0
3
Fig. 5. Admittance Curves
Fig. 1. Saturation Voltage Characteristics
V
T
CE
T
J
J
= 125°C
1
1
= 10V
4
= 25°C
T
J
= 125°C
2
2
5
V
V
3
CE
3
GE
6
V
T
- Volts
CE
- Volts
J
= 25°C
- Volts
4
4
7
5
5
8
V
GE
= 15V
6
6
13V
11V
9
9V
7V
5V
7
10
7
G32N60B P1
Fig. 6. Temperature Dependence of BV
IXGH 32N60B IXGH 32N60BD1
IXGT 32N60B
1.75
1.50
1.25
1.00
0.75
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
200
160
120
80
40
0
25
-50 -25
0
Fig. 2. Extended Output Characteristics
Fig. 4. Temperature Dependence of V
V
T
GE
BV
I
C
J
= 25°C
= 250µA
= 15V
CES
50
2
V
I
C
0
GE(th)
= 250µA
T
T
V
J
25
GE
75
J
V
- Degrees C
4
- Degrees C
= 15V
CE
50
- Volts
IXGT 32N60BD1
100
6
75 100 125 150
I
I
I
C
C
C
= 64A
= 16A
= 32A
13V
125
8
11V
5V
9V
7V
DSS
& V
CE(sat)
150
10
GE(th)