FGP5N60LS Fairchild Semiconductor, FGP5N60LS Datasheet - Page 5

• Manufacturer Part Number: FGP5N60LS
• Description: IGBT 600V 10A 83W TO220
• Manufacturer: Fairchild Semiconductor

Specifications of FGP5N60LS

• Igbt Type: Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 12V, 14A
• Current - Collector (ic) (max): 10A
• Power - Max: 83W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.8 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 10 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 83 W
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 10A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-220AB
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGP5N60LS Rev. A1
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Figure 15. Turn-off Characteristics vs.
Figure 17. Switching Loss vs. Collector Current
1000
100
800
100
300
100
10
20
10
2
2
0
Common Emitter
V
T
T
Common Emitter
V
T
T
Gate Resistance
Collector Current
C
C
GE
GE
C
C
= 25
= 125
= 25
= 125
= 15V, R
= 15V, R
o
o
10
C
o
C
o
C
C
Gate Resistance, R
Collector Current, I
4
4
Collector Current, I
G
G
= 10
= 10

20

6
6
Common Emitter
V
I
T
T
C
CC
C
C
30
E
= 5A
t
off
= 25
= 125
t
d(off)
E
C
G
f
= 400V, V
on
C
[A]
[  ]
[A]
o
C
o
t
C
8
8
d(off)
t
f
40
GE
= 15V
10
10
50
5
Figure 16. Switching Loss vs. Gate Resistance
0.1
50
10
Figure 14. Turn-on Characteristics vs.
Figure 18. Turn off Switching SOA
1
1000
0.1
100
1
10
30
1
2
Safe Operating Area
V
0
GE
Common Emitter
V
I
T
T
C
C
C
CC
= 13.5V, T
= 5A
= 25
= 125
Collector-Emitter Voltage, V
= 400V, V
o
10
Collector Current
Characteristics
C
o
C
Collector Current, I
4
Gate Resistance, R
C
10
GE
= 125
t
d(on)
= 15V
t
20
r
o
C
6
Common Emitter
V
T
T
30
GE
C
C
C
= 25
= 125
100
G
= 15V, R
[A]
E
E
[  ]
on
o
off
C
o
8
C
CE
40
G
[V]
= 10
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
10
50
1000