FGP5N60LS Fairchild Semiconductor, FGP5N60LS Datasheet - Page 2

• Manufacturer Part Number: FGP5N60LS
• Description: IGBT 600V 10A 83W TO220
• Manufacturer: Fairchild Semiconductor

Specifications of FGP5N60LS

• Igbt Type: Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 12V, 14A
• Current - Collector (ic) (max): 10A
• Power - Max: 83W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.8 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 10 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 83 W
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 10A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-220AB
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGP5N60LS Rev. A1
Package Marking and Ordering Information
Electrical Characteristics of the IGBT
Off Characteristics
BV
BV
T
I
I
On Characteristics
V
V
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
E
E
E
t
t
t
t
E
E
E
Q
Q
Q
Device Marking
Symbol
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
GE(th)
CE(sat)
on
off
ts
on
off
ts
ies
oes
res
g
ge
gc
J
CES
FGP5N60LS
CES
Collector to Emitter Breakdown Voltage V
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
Collector to Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
Parameter
FGP5N60LS
Device
Package
TT220
V
V
V
I
I
I
T
I
I
T
V
f = 1MHz
V
R
Inductive Load, T
V
R
Inductive Load, T
V
V
C
C
C
C
C
C
C
GE
GE
CE
GE
CE
CC
CC
CE
GE
G
G
= 250A, V
= 5A
= 5A
= 14A
= 14A
= 125
= 125
= 10, V
= 10, V
= 30V
= V
= 400V, I
= 0V, I
= 0V, I
= V
= 400V, I
= 400V, I
= 15V
Test Conditions
T
,
,
C
CES
V
V
GES
,
,
o
o
= 25°C unless otherwise noted
V
V
GE
GE
C
C
,
GE
GE
2
C
C
V
, V
, V
GE
GE
= 15V
= 15V,
GE
= 250A
= 250A
C
C
C
CE
= 12V
= 12V,
GE
CE
= 5A,
= 15V,
= 5A,
= 15V,
= 5A,
= 0V,
Packaging
= V
C
C
= 0V
= 0V
= 25
= 125
GE
Type
Tube
o
C
o
C
Qty per Tube
Min.
600
2.7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
50ea
Typ.
18.3
278
130
168
150
168
248
118
0.8
3.9
1.7
1.8
2.7
3.1
4.3
1.6
4.1
1.8
1.6
7.9
28
36
38
37
80
11
-
-
-
Max.
±400
250
4.5
2.1
3.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max Qty
per Box
www.fairchildsemi.com
-
Units
V/
A
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
J
J
J
ns
ns
ns
ns
J
J
J
V
V
V
V
V
V
o
C