APT54GA60BD30 Microsemi Power Products Group, APT54GA60BD30 Datasheet

IGBT 600V 96A 416W TO247

APT54GA60BD30

Manufacturer Part Number
APT54GA60BD30
Description
IGBT 600V 96A 416W TO247
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APT54GA60BD30

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 32A
Current - Collector (ic) (max)
96A
Power - Max
416W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT54GA60BD30MI
APT54GA60BD30MI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT54GA60BD30G
Manufacturer:
APT
Quantity:
6 000
Static Characteristics
Absolute Maximum Ratings
POWER MOS 8
achieved through leading technology silicon design and lifetime control processes. A
reduced E
nologies. Low gate charge and a greatly reduced ratio of C
immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and
capacitance of the poly-silicone gate structure help control di/dt during switching, result-
ing in low EMI, even when switching at high frequency.
Symbol
Symbol
FEATURES
T
V
SSOA
V
V
J
• Fast switching with low EMI
• Very Low E
• Ultra low C
• Low conduction loss
• Low gate charge
• Increased intrinsic gate resistance for low EMI
• RoHS compliant
V
V
BR(CES)
, T
I
I
I
P
I
I
T
CE(on)
GE(th)
GES
CM
CES
ces
C1
C2
GE
D
L
STG
off
Parameter
Collector Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Gate-Emitter Voltage
Total Power Dissipation @ T
Switching Safe Operating Area @ T
Operating and Storage Junction Temperature Range
Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
Collector-Emitter Breakdown Voltage
Collector-Emitter On Voltage
Gate Emitter Threshold Voltage
Zero Gate Voltage Collector Current
Gate-Emitter Leakage Current
Parameter
- V
res
off
®
CE(ON)
is a high speed Punch-Through switch-mode IGBT. Low E
for maximum effi ciency
for improved noise immunity
tradeoff results in superior effi ciency compared to other IGBT tech-
High Speed PT IGBT
2
1
C
= 25°C
C
C
Microsemi Website - http://www.microsemi.com
= 25°C
= 100°C
J
= 150°C
T
J
= 25°C unless otherwise specifi ed
res
V
V
CE
V
I
GE
/C
C
V
GE
Test Conditions
V
= 32A
= 600V,
GE
= 15V,
ies
GE
= 0V
= 0V, I
provide excellent noise
V
=V
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Half bridge
• High power PFC boost
• Welding
• UPS, solar, and other inverters
• High frequency, high effi ciency industrial
GS
CE
= ±30V
, I
C
C
= 1.0mA
= 1mA
T
T
T
T
off
J
J
J
J
= 25°C
= 125°C
= 25°C
= 125°C
is
Combi (IGBT and Diode)
APT54GA60BD30
Min
600
3
APT54GA60BD30
APT54GA60SD30
161A @ 600V
-55 to 150
Ratings
Typ
600
161
416
300
±30
2.0
1.9
4.5
96
54
APT54GA60SD30
Max
3000
±100
D
275
2.5
3
6
PAK
600V
Unit
Unit
°C
μA
nA
W
V
V
V
A

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APT54GA60BD30 Summary of contents

Page 1

... 32A 1mA 600V ±30V GS Microsemi Website - http://www.microsemi.com APT54GA60BD30 APT54GA60SD30 is APT54GA60SD30 off 3 D PAK APT54GA60BD30 Combi (IGBT and Diode) Ratings 600 96 54 161 ±30 416 161A @ 600V -55 to 150 300 Min Typ Max 600 T = 25°C 2.0 2 125° 25°C ...

Page 2

Dynamic Characteristics Symbol Parameter C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res Q Total Gate Charge Gate-Emitter Charge ge Q Gate- Collector Charge gc SSOA Switching Safe Operating Area t Turn-On Delay ...

Page 3

Typical Performance Curves 100 V = 15V 25° 55° 125° 150° COLLECTOR-TO-EMITTER VOLTAGE (V) CE FIGURE 1, Output ...

Page 4

Typical Performance Curves 400V 25°C or 125° 4.7Ω 100μ COLLECTOR-TO-EMITTER CURRENT (A) CE ...

Page 5

Typical Performance Curves 10000 1000 100 10 0 100 200 300 V , COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) CE FIGURE 17, Capacitance vs Collector-To-Emitter Voltage 0.35 0. 0.9 0.25 0.7 0.20 0.5 0.15 0.3 0.10 0.05 0.1 0. ...

Page 6

APT30DQ60 D.U.T. Figure 12, Inductive Switching Test Circuit T = 125°C 90 d(off 10% Switching Energy Figure 14, Turn-off Switching Waveforms and Defi nitions 10% Gate Voltage t d(on) ...

Page 7

ULTRAFAST SOFT RECOVERY RECTIFIER DIODE MAXIMUM RATINGS Symbol Characteristic / Test Conditions I Maximum Average Forward Current (T F(AV) I RMS Forward Current (Square wave, 50% duty) F(RMS) I Non-Repetitive Forward Surge Current (T FSM STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic ...

Page 8

Dynamic Characteristics 100 175° 125° 0.5 1.0 1 ANODE-TO-CATHODE VOLTAGE (V) F Figure 2. Forward Current vs. Forward Voltage 1200 T = 125° ...

Page 9

Dynamic Characteristics +18V Forward Conduction Current /dt - Rate of Diode Current Change Through Zero Crossing Maximum Reverse Recovery Current. RRM Reverse R ecovery Time, ...

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