FII50-12E IXYS, FII50-12E Datasheet
FII50-12E
Specifications of FII50-12E
Related parts for FII50-12E
FII50-12E Summary of contents
Page 1
... off MHz ies 600 Gon thJC R with heatsink compound thJH © 2003 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 Maximum Ratings 1200 ± 125° CES = 39 Ω 125° 200 Characteristic Values (T = 25°C, unless otherwise specified) VJ min ...
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... V I ISOL ISOL F mounting force with clip C Symbol Conditions d ,d pin - pin pin - backside metal S A Weight © 2003 IXYS All rights reserved Maximum Ratings 48 25 Characteristic Values min. typ. max. 2.4 2.8 1 125°C 180 ns VJ 1.8 mJ 1.3 K/W 1.6 ...
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... A GE 100 Fig. 1 Typ. output characteristics 120 100 125° 25° Fig. 3 Typ. transfer characteristics 120 Fig. 5 Typ. turn on gate charge © 2003 IXYS All rights reserved 25° 600 0.0001 160 200 Fig. 6 FII 50-12E 120 100 Fig. 2 Typ. output characteristics ...
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... Fig. 9 Typ. turn on energy and switching times versus gate resistor 125° 600 200 400 600 800 1000 -di /dt [A/µs] F Fig. 11 Typ. turn off characteristics of free wheeling diode © 2003 IXYS All rights reserved 100 off 600 ± Ω 125° ...