IDH05SG60C Infineon Technologies, IDH05SG60C Datasheet - Page 4

• Manufacturer Part Number: IDH05SG60C
• Description: DIODE SCHOTTKY 600V 5A TO220-2
• Manufacturer: Infineon Technologies
• Series: thinQ!™r

Specifications of IDH05SG60C

• Diode Type: Schottky
• Voltage - Forward (vf) (max) @ If: 2.3V @ 5A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 5A (DC)
• Current - Reverse Leakage @ Vr: 30µA @ 600V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 110pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Repetitive Reverse Voltage Vrrm Max: 600V
• Forward Current If(av): 5A
• Forward Voltage Vf Max: 2.3V
• Reverse Recovery Time Trr Max: 10ns
• Forward Surge Current Ifsm Max: 26A
• Operating: RoHS Compliant
• Technology: thinQ!™ 3G
• V: 600.0 V
• If (typ): 5.0 A
• Qc (typ): 6.0 nC
• Package: TO-220 real 2pin
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Details
• Other names: SP000607034

Rev. 2.3
5 Typ. capacitance charge vs. current slope
Q
7 Transient thermal impedance
Z
thJC
C
=f(di
=f(t
10
10
10
10
F
-1
-2
7
6
5
4
3
2
1
0
p
1
0
/dt )
); parameter: D = t
10
100
-6
5)
0.1
0.05
0.02
0.01
0.5
0.2
; I
0
F
≤I
10
F,max
-5
400
di
10
F
-4
P
/dt [A/µs]
/T
tp [s]
10
-3
700
10
-2
1000
10
page 4
-1
6 Typ. reverse current vs. reverse voltage
I
8 Typ. capacitance vs. reverse voltage
C =f(V
R
=f(V
150
125
100
10
10
10
10
10
10
75
50
25
R
R
0
-1
-2
-3
-4
); parameter: T
1
0
); T
10
100
-1
175 °C
150 °C
100 °C
-55 °C
C
25 °C
=25 °C, f =1 MHz
200
10
0
j
300
V
V
10
R
R
[V]
[V]
1
400
IDH05SG60C
10
2
500
2009-08-04
10
600
3