RB160M-90TR Rohm Semiconductor, RB160M-90TR Datasheet
RB160M-90TR
Specifications of RB160M-90TR
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RB160M-90TR Summary of contents
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... Lim its Sym bol FSM 150 Tj -40 to +150 Ts tg Min. Typ. Max 0. 100 R RB160M-90 Land size figure (Unit : mm) 1.2 PMDU Structure 0.25±0.05 φ1.0±0.1 1.5MAX Unit ℃ ℃ Unit Conditions V I =1.0A F µA V =90V R Rev.B 1/3 ...
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... DISPERSION MAP Mounted on epoxy board 1000 IM=10mA IF=0.5A Rth(j-a) 1ms time 100 300us Rth(j- 0.1 0.001 0.01 0 100 100 TIME:t(s) Rth-t CHARACTERISTICS RB160M-90 1000 条件：f=1MHz f=1MHz 100 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 200 190 Ta=25℃ f=1MHz 180 VR=0V 170 ...
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... R=1.5kΩ ESD DISPERSION MAP D=t/T 2 VR=45V DC Tj=150℃ T 1.5 D=1/2 1 Sin(θ＝180) 0 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) RB160M- 2 D=t/T 2 VR=45V DC T Tj=150℃ 1.5 D=1/2 1 Sin(θ＝180) 0.5 0 150 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ ...
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Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...