BAV102,115 NXP Semiconductors, BAV102,115 Datasheet - Page 3

DIODE SW G-P 200V 250MA SOD80C

BAV102,115

Manufacturer Part Number
BAV102,115
Description
DIODE SW G-P 200V 250MA SOD80C
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAV102,115

Package / Case
LL-34, LLDS, MiniMELF, SOD80C
Mounting Type
Surface Mount
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Current - Reverse Leakage @ Vr
100nA @ 150V
Voltage - Forward (vf) (max) @ If
1.25V @ 200mA
Voltage - Dc Reverse (vr) (max)
150V
Capacitance @ Vr, F
5pF @ 0V, 1MHz
Current - Average Rectified (io)
250mA (DC)
Product
General Purpose Diodes
Peak Reverse Voltage
200 V
Forward Continuous Current
0.25 A
Max Surge Current
9 A
Configuration
Single
Recovery Time
50 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
0.1 uA
Operating Temperature Range
+ 175 C
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933699350115::BAV102 T/R::BAV102 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAV102,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
6. Thermal characteristics
7. Characteristics
BAV102_BAV103
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Table 7.
[1]
Table 8.
T
[1]
[2]
Symbol
P
T
T
T
Symbol
R
R
Symbol
V
I
C
t
R
rr
amb
j
amb
stg
tot
F
th(j-a)
th(j-t)
d
Pulse test: t
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
T
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Pulse test: t
When switched from I
= 25
j
= 25 °C prior to surge.
°
C unless otherwise specified.
Parameter
total power dissipation
junction temperature
ambient temperature
storage temperature
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to tie-point
Parameter
forward voltage
reverse current
diode capacitance
reverse recovery time
Limiting values
Thermal characteristics
Characteristics
BAV102
BAV103
p
p
≤ 300 μs; δ ≤ 0.02.
≤ 300 μs; δ ≤ 0.02.
All information provided in this document is subject to legal disclaimers.
F
= 30 mA to I
Rev. 4 — 6 August 2010
…continued
R
= 30 mA; R
T
V
V
f = 1 MHz; V
Conditions
Conditions
in free air
Conditions
I
I
V
V
F
F
amb
R
R
R
R
= 100 mA
= 200 mA
= 150 V
= 150 V; T
= 200 V
= 200 V; T
≤ 25 °C
L
= 100 Ω; measured at I
Single general-purpose switching diodes
R
j
j
= 0 V
= 150 °C
= 150 °C
BAV102; BAV103
[2]
[1]
[1]
[2]
Min
-
-
−65
−65
Min
-
-
Min
-
-
-
-
-
-
-
-
R
= 3 mA.
Typ
-
-
Typ
-
-
-
-
-
-
-
-
© NXP B.V. 2010. All rights reserved.
Max
400
175
+175
+175
Max
375
300
Max
1.0
1.25
100
100
100
100
5
50
Unit
mW
°C
°C
°C
Unit
K/W
K/W
Unit
V
V
nA
μA
nA
μA
pF
ns
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