PMLL4448,135 NXP Semiconductors, PMLL4448,135 Datasheet - Page 3

DIODE HIGH SPEED SW 75V SOD80C

PMLL4448,135

Manufacturer Part Number
PMLL4448,135
Description
DIODE HIGH SPEED SW 75V SOD80C
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PMLL4448,135

Package / Case
LL-34, LLDS, MiniMELF, SOD80C
Voltage - Forward (vf) (max) @ If
1V @ 100mA
Voltage - Dc Reverse (vr) (max)
75V
Current - Average Rectified (io)
200mA (DC)
Current - Reverse Leakage @ Vr
25nA @ 20V
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
4ns
Capacitance @ Vr, F
4pF @ 0V, 1MHz
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
100 V
Forward Continuous Current
0.2 A
Max Surge Current
4 A
Configuration
Single
Recovery Time
4 ns
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
0.025 uA
Operating Temperature Range
+ 200 C
Maximum Operating Temperature
+ 200 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
933834760135
PMLL4448 /T3
PMLL4448 /T3
NXP Semiconductors
6. Thermal characteristics
7. Characteristics
PMLL4148L_PMLL4448
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Table 7.
[1]
Table 8.
T
[1]
[2]
Symbol
P
T
T
T
Symbol
R
R
Symbol
V
I
I
C
t
V
R
R
rr
amb
j
amb
stg
tot
F
FR
th(j-a)
th(j-sp)
d
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
T
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
When switched from I
When switched from I
= 25
j
= 25 °C prior to surge.
°
C unless otherwise specified.
Parameter
forward voltage
reverse current
reverse current
diode capacitance
reverse recovery time
forward recovery voltage
Limiting values
Thermal characteristics
Characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
PMLL4148L
PMLL4448
PMLL4448
Parameter
total power dissipation
junction temperature
ambient temperature
storage temperature
All information provided in this document is subject to legal disclaimers.
F
F
Rev. 8 — 1 February 2011
= 10 mA to I
= 50 mA; t
…continued
r
= 20 ns.
R
= 60 mA; R
I
I
V
V
Conditions
I
V
V
F
F
F
R
R
R
R
= 50 mA
= 5 mA
= 100 mA
= 20 V
= 20 V; T
= 20 V; T
= 0 V; f = 1 MHz
Conditions
in free air
PMLL4148L; PMLL4448
Conditions
T
amb
L
= 100 Ω; measured at I
= 25 °C
j
j
= 150 °C
= 100 °C
[1]
High-speed switching diodes
[1]
[1]
[2]
Min
-
-
-
Min
-
−65
−65
Min
-
620
-
-
-
-
-
-
-
R
= 1 mA.
Typ
-
-
Typ
-
-
-
-
-
-
-
-
-
© NXP B.V. 2011. All rights reserved.
Max
500
200
+200
+200
Max
350
300
Max
1
720
1
25
50
3
4
4
2.5
Unit
mW
°C
°C
°C
Unit
K/W
K/W
Unit
V
mV
V
nA
μA
μA
pF
ns
V
3 of 11

Related parts for PMLL4448,135