EGP10F Fairchild Semiconductor, EGP10F Datasheet - Page 122
EGP10F
Manufacturer Part Number
EGP10F
Description
DIODE FAST GPP 1A 300V DO-41
Manufacturer
Fairchild Semiconductor
Specifications of EGP10F
Voltage - Forward (vf) (max) @ If
1.25V @ 1A
Voltage - Dc Reverse (vr) (max)
300V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
5µA @ 300V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Mounting Type
Through Hole
Package / Case
DO-204AL, DO-41, Axial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
EGP10F
Manufacturer:
Fairchild Semiconductor
Quantity:
34
Part Number:
EGP10F-5410E3/54
Manufacturer:
VISHAY/威世
Quantity:
20 000
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JFETs
SOT-223 N-Channel
JFTJ105
SOT-23 N-Channel
KSK595H
MMBF5484
MMBFJ210
MMBF5485
MMBFJ309
MMBFJ211
MMBF5457
MMBF5486
MMBFJ212
MMBFJ310
MMBF5458
MMBF5459
MMBF4393
MMBF4392
MMBF4416
MMBF4391
MMBFJ113
MMBFJ112
MMBF4416A
MMBFJ111
MMBFJ201
MMBF4117
MMBF5103
MMBF4118
MMBFJ202
BSR58
MMBF4093
MMBF4119
BSR57
MMBF4092
MMBF4091
Products
BV
(V)
25
20
25
25
25
25
25
25
25
25
25
25
25
30
30
30
30
35
35
35
35
40
40
40
40
40
40
40
40
40
40
40
GDS
Dissipation
Power
(mW)
1000
100
225
225
225
350
225
350
225
225
350
350
350
350
350
225
350
350
350
225
350
350
225
350
225
350
250
350
225
250
350
350
P
D
Min (V)
4.5
0.3
0.5
2.5
0.5
0.5
2.5
0.5
0.3
0.6
1.2
0.8
0.8
–
–
1
1
2
4
2
1
2
2
4
1
3
1
1
2
2
2
5
Typ (V) Max (V) @ I
0.6
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
V
GS
1.5
4.5
6.5
1.5
1.8
2.7
10
10
10
10
3
3
4
4
6
6
6
7
8
3
5
6
3
5
6
3
4
4
5
6
6
7
(off)
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
500
D
1
1
1
1
1
(µA) @ V
2-117
Discrete Power Products –
15
15
15
10
15
15
15
15
10
15
15
20
20
15
20
15
20
10
15
10
20
15
20
10
15
20
20
DS
5
5
5
5
5
(V) Min (mA) Max (mA) @V
0.005
0.15
0.03
0.08
500
0.2
0.9
0.2
12
15
24
25
50
20
10
20
15
30
1
2
4
7
1
8
2
4
5
2
5
5
8
8
0.015
0.35
0.09
0.24
150
100
4.5
I
0.6
15
10
30
20
20
40
60
16
30
75
15
40
80
DSS
–
5
5
9
–
–
–
1
–
–
–
15
15
15
15
10
15
15
15
15
10
15
15
20
20
15
20
15
15
15
15
20
10
15
10
20
15
20
10
15
20
20
DS
5
(V) Min (mS) Max (mS)
Bipolar Transistors and JFETs
0.07
0.08
3.5
1.5
4.5
7.5
0.1
10
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
3
4
6
1
4
7
8
2
GFS
0.21
0.25
0.33
5.5
7.5
12
20
12
12
18
15
–
–
6
7
5
8
6
–
–
–
–
–
–
–
–
–
–
–
–
–
–
R
(Ω)
100
100
60
30
50
30
60
80
50
30
3
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
DS
I
0.0001
0.0001
0.0001
0.0002
0.0002
0.0002
D
0.003
0.001
0.001
0.001
(µA)
(off)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
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