BAV103 Fairchild Semiconductor, BAV103 Datasheet
BAV103
Manufacturer Part Number
BAV103
Description
DIODE 200V 200MA LL34
Manufacturer
Fairchild Semiconductor
Datasheet
1.BAV103.pdf
(3 pages)
Specifications of BAV103
Voltage - Forward (vf) (max) @ If
1.25V @ 200mA
Voltage - Dc Reverse (vr) (max)
200V
Current - Average Rectified (io)
200mA
Current - Reverse Leakage @ Vr
100nA @ 200V
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
50ns
Capacitance @ Vr, F
5pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
MELF (LL-34)
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
250 V
Forward Voltage Drop
1.25 V
Recovery Time
50 ns
Forward Continuous Current
0.2 A
Max Surge Current
4 A
Reverse Current Ir
0.1 uA
Power Dissipation
0.5 W
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 200 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAV103
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Part Number:
BAV103,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Company:
Part Number:
BAV103-GS08
Manufacturer:
Vishay Semiconductors
Quantity:
25 620
Part Number:
BAV103-GS08
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
BAV103-GS18
Manufacturer:
VISHAY
Quantity:
5 000
Part Number:
BAV103-GS18
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
BAV103115
Manufacturer:
NXP Semiconductors
Quantity:
133 123
BAV103 Rev. E1
© 2010 Fairchild Semiconductor Corporation
BAV103
High Voltage, General Purpose Diode
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics
General Description
A General Purpose diode that couples high forward
conductance fast switching speed and high blocking
voltages in a glass leadless LL-34 Surface Mount
package.
Placement of the Expansion Gap has no relationship to
the location of the Cathode Terminal which is indicated
by the first color band.
Symbol
Symbol
i
F(surge)
T
R
T
W
P
B
C
V
STG
T
I
I
I
θJA
i
RR
O
R
F
f
J
D
V
F
T
iv
Storage Temperature
Operating Junction Temperature
Total Power Dissipation at T
Linear Derating Factor from T
Thermal Resistance Junction-to-Ambient
Working Inverse Voltage
Average Rectified Current
DC Forward Current (I
Recurrent Peak Forward Current
Peak Forward Surge Current (I
Breakdown Voltage
Reverse Leakage
Forward Voltage
Capacitance
Reverse Recovery Time
Parameter
T
A
F
=25°C unless otherwise noted
)
Parameter
T
A
A
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
=25°C unless otherwise noted
A
= 25°C
I
V
V
I
I
V
I
R
FSM
R
F
F
F
= 25°C
R
R
R
L
= 100mA
= 200mA
= I
= 100μA
= 100Ω
= 200V
= 200V, T
= 0, f = 1.0MHz
)
R
Test Conditions
= 30mA, I
1
A
= 150°C
RR
= 1.0mA,
Expansion Gap
Min.
250
-65 to +200
-65 to +200
Value
3.33
500
350
200
200
500
600
1.0
4.0
Max.
ORANGE
1.00
1.25
GREEN
100
100
5.0
50
November 2010
www.fairchildsemi.com
mW/°C
Units
Units
°C/W
Amp
Amp
mW
mA
mA
mA
nA
μA
pF
°C
°C
ns
V
V
V
V
Related parts for BAV103
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
BAV103 Summary of contents
Page 1
... Parameter B Breakdown Voltage V I Reverse Leakage R V Forward Voltage F C Capacitance T T Reverse Recovery Time RR © 2010 Fairchild Semiconductor Corporation BAV103 Rev. E1 Expansion Gap T =25°C unless otherwise noted A Parameter = 25° 25° FSM Pulse Width = 1.0 second Pulse Width = 1.0 microsecond T =25° ...
Page 2
... Physical Dimension © 2010 Fairchild Semiconductor Corporation BAV103 Rev Dimensions in Millimeters www.fairchildsemi.com ...
Page 3
... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower F-PFS FRFET Auto-SPM Build it Now Global Power Resource CorePLUS Green FPS CorePOWER Green FPS ...