BAV102 Fairchild Semiconductor, BAV102 Datasheet

DIODE 150V 200MA LL34

BAV102

Manufacturer Part Number
BAV102
Description
DIODE 150V 200MA LL34
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of BAV102

Voltage - Forward (vf) (max) @ If
1.25V @ 200mA
Voltage - Dc Reverse (vr) (max)
150V
Current - Average Rectified (io)
200mA
Current - Reverse Leakage @ Vr
100nA @ 150V
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
50ns
Capacitance @ Vr, F
5pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
MELF (LL-34)
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
200 V (Min)
Forward Voltage Drop
1.25 V
Recovery Time
50 ns
Forward Continuous Current
0.2 A
Max Surge Current
4 A
Reverse Current Ir
0.1 uA
Power Dissipation
0.5 W
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 200 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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© 1997 Fairchild Semiconductor Corporation
General Description:
A General Purpose diode that couples high forward
conductance fast switching speed and high blocking
voltages in a glass leadless LL-34 Surface Mount
package.
Placement of the Expansion Gap has no relationship to
the location of the Cathode Terminal which is indicated
by the first color band.
High Voltage,
General Purpose Diode
Absolute Maximum Ratings*
Electrical Characteristics
SYM
Sym
B
V
T
T
T
P
R
W
I
I
i
i
I
C
O
F
f
F(surge)
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
stg
J
R
D
RR
OJA
V
F
iv
T
Breakdown Voltage
Reverse Leakage
Forward Voltage
Capacitance
Reverse Recovery Time
Storage Temperature
Operating Junction Temperature
Total Power Dissipation at T
Linear Derating Factor from T
Thermal Resistance Junction-to-Ambient
Working Inverse Voltage
Average Rectified Current
DC Forward Current (I
Recurrent Peak Forward Current
Peak Forward Surge Current (I
CHARACTERISTICS
F
)
A
A
= 25
TA = 25
FSM
= 25
O
) Pulse Width = 1.0 second
Parameter
C
O
Pulse Width = 1.0 microsecond
C
TA = 25
O
C unless otherwise noted
BAV102
MIN
200
O
C unless otherwise noted
MAX
1.00
1.25
100
100
5.0
50
UNITS
Expansion Gap
V
nA
uA
V
V
pF
ns
-65 to +200
-65 to +200
Value
I
V
V
V
I
R
R
I
I
F
3.33
F
F
R
R
R
= I
L
500
350
150
200
500
600
1.0
4.0
= 100 Ohms
TEST CONDITIONS
= 100 uA
= 150 V
= 150 V T
= 100 mA
= 200 mA
=
R
30 mA I
0.0 V, f = 1.0 MHz
GREEN
RED
RR
A
Units
mW/
= 1.0 mA
O
= 150
C/W
mW
mA
mA
O
O
mA
Amp
Amp
V
C
C
O
C
O
C

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BAV102 Summary of contents

Page 1

... Electrical Characteristics SYM CHARACTERISTICS B Breakdown Voltage V I Reverse Leakage R V Forward Voltage F C Capacitance T T Reverse Recovery Time RR © 1997 Fairchild Semiconductor Corporation BAV102 unless otherwise noted Parameter Pulse Width = 1.0 second FSM Pulse Width = 1.0 microsecond ...

Page 2

... ON THE SAME TERMINAL OR AT OPPOSITE TERMINALS OF THE DIODE. 0.138 (3.505) 0.130 (3.302) 0.104 (2.64) R EFERENCE 0.020 (0.50) 0.014 (0.35) DISCRETE POWER AND SIGNAL 0.059 (1.499) 0.055 (1.397) JEDEC (AC VERSION) TECHNOLOGIES TERMINALS: DUMET (ALLOY 47) EXPANSION GAP GLASS SLEEVE LL-34 Fairchild Semiconductor's Criteria 5-MAR-98 ...

Page 3

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ GTO™ DenseTrench™ ...

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