1SR154-600TE25 Rohm Semiconductor, 1SR154-600TE25 Datasheet

DIODE RECTIFIER 600V 1A SOD-106

1SR154-600TE25

Manufacturer Part Number
1SR154-600TE25
Description
DIODE RECTIFIER 600V 1A SOD-106
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of 1SR154-600TE25

Diode Type
Standard
Voltage - Forward (vf) (max) @ If
1.1V @ 1A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
10µA @ 600V
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
SOD-106, PMDS
Repetitive Reverse Voltage Vrrm Max
600V
Forward Current If(av)
1A
Forward Voltage Vf Max
1.1V
Forward Surge Current Ifsm Max
30A
Diode Case Style
SOD-106
No. Of Pins
2
Product
Standard Recovery Rectifier
Configuration
Single
Reverse Voltage
600 V
Forward Voltage Drop
1.1 V
Forward Continuous Current
1 A
Max Surge Current
30 A
Reverse Current Ir
10 uA
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
1SR154-600TE25TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
1SR154-600TE25
Manufacturer:
ROHM
Quantity:
99 000
Part Number:
1SR154-600TE25
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Company:
Part Number:
1SR154-600TE25
Quantity:
26 000
Company:
Part Number:
1SR154-600TE25
Quantity:
1 500
Diodes
Rectifier diode
1SR154-600
General purpose rectification
1) Small power mold type. (PMDS)
2) High reliability.
Silicon diffused junction
Abusolute peak reverse voltage
Reverse voltage (repetitive peak)
Average rectified forward current
F
Junction temperature
Storage temperature
F
Reverse cur
Applications
Features
Construction
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
orward current surge peak (60Hz・1cyc)
orward voltage
Parameter
rent
Parameter
Symbol
V
I
R
F
Min.
-
-
ROHM : PMDS
JEDEC : SOD-106
External dimensions (Unit : mm)
Taping dimensions (Unit : mm)
2.6±0.2
1.5±0.2
1
5
2.9±0.1
Symbol
Typ.
V
Tstg
I
-
-
V
FSM
RMS
Io
Tj
R
Manufacture Date
4.0±0.1
Max.
1.1
10
2.0±0.05
4.0±0.1
2.0±0.2
-55 to +150
Unit
Limits
uA
V
0.1±0.02
    0.1
750
600
150
30
1
I
V
F
φ1.55±0.05
=1A
R
=600V
Land size figure (Unit : mm)
φ1.55
PMDS
Conditions
Structure
Unit
V
V
A
A
1SR154-600
Rev.A
2.0
0.3
2.8MAX
1/3

Related parts for 1SR154-600TE25

1SR154-600TE25 Summary of contents

Page 1

... Limits Symbol V 750 RMS V 600 FSM 150 Tj -55 to +150 Tstg Min. Typ. Max. Unit - - 1 1SR154-600 Land size figure (Unit : mm) 2.0 PMDS Structure 0.3 φ1.55±0.05 φ1.55 2.8MAX Unit ℃ ℃ Conditions I = =600V R Rev.A 1/3 ...

Page 2

... AVE:1.869us 1.7 1.6 1.5 trr DISPERSION MAP Mounted on epoxy board 1000 IM=10mA IF=0.5A Rth(j-a) time 1ms 100 300us 10 1 0.1 100 0.001 0.01 0 100 TIME:t(s) Rth-t CHARACTERISTICS 1SR154-600 100 f=1MHz 600 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 50 Ta=25℃ 45 f=1MHz 40 VR=0V n=10pcs AVE:18.1pF ...

Page 3

... ESD DISPERSION MAP 2.5 t D=t/T VR=300V Tj=150℃ D=1/2 1.5 1 Sin(θ=180) 0.5 0 600 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curve゙(Io-Ta) 1SR154-600 2 D=t/T VR=300V 2 DC Tj=150℃ T 1.5 D=1/2 1 Sin(θ=180) 0.5 0 150 100 125 CASE TEMPARATURE:Tc(℃) Derating Curve゙ ...

Page 4

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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