BAS86,115 NXP Semiconductors, BAS86,115 Datasheet - Page 7

• Manufacturer Part Number: BAS86,115
• Description: DIODE SCHOTTKY 50V 200MA SOD80C
• Manufacturer: NXP Semiconductors

Specifications of BAS86,115

• Package / Case: LL-34, LLDS, MiniMELF, SOD80C
• Voltage - Forward (vf) (max) @ If: 900mV @ 100mA
• Voltage - Dc Reverse (vr) (max): 50V
• Current - Average Rectified (io): 200mA (DC)
• Current - Reverse Leakage @ Vr: 5µA @ 40V
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Capacitance @ Vr, F: 8pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 50 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 5 A
• Configuration: Single
• Recovery Time: 4 ns
• Forward Voltage Drop: 0.9 V @ 0.1 A
• Maximum Reverse Leakage Current: 5 uA
• Operating Temperature Range: + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-3411-2; 933939380115; BAS86 T/R

NXP Semiconductors
12. Revision history
Table 9.
BAS86
Product data sheet
Document ID
BAS86_4
Modifications:
BAS86_3
BAS86_2
BAS86_1
Revision history
Release date
20100908
20000525
19961001
19960320
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Table 1 “Quick reference
Section 4
Figure
Section 10 “Packing
Section 11
Section 13 “Legal
6: superseded by minimized package outline drawing
All information provided in this document is subject to legal disclaimers.
“Marking”: updated
“Soldering”: added
Data sheet status
Product data sheet
Product specification
Product specification
Product specification
Rev. 4 — 8 September 2010
information”: updated
information”: added
data”: added
Change notice
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Supersedes
BAS86_3
BAS86_2
BAS86_1
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Schottky barrier diode
© NXP B.V. 2010. All rights reserved.
BAS86
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