BAS86,115 NXP Semiconductors, BAS86,115 Datasheet - Page 4

DIODE SCHOTTKY 50V 200MA SOD80C

BAS86,115

Manufacturer Part Number
BAS86,115
Description
DIODE SCHOTTKY 50V 200MA SOD80C
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAS86,115

Package / Case
LL-34, LLDS, MiniMELF, SOD80C
Voltage - Forward (vf) (max) @ If
900mV @ 100mA
Voltage - Dc Reverse (vr) (max)
50V
Current - Average Rectified (io)
200mA (DC)
Current - Reverse Leakage @ Vr
5µA @ 40V
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
4ns
Capacitance @ Vr, F
8pF @ 1V, 1MHz
Mounting Type
Surface Mount
Product
Schottky Diodes
Peak Reverse Voltage
50 V
Forward Continuous Current
0.2 A
Max Surge Current
5 A
Configuration
Single
Recovery Time
4 ns
Forward Voltage Drop
0.9 V @ 0.1 A
Maximum Reverse Leakage Current
5 uA
Operating Temperature Range
+ 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-3411-2
933939380115
BAS86 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAS86,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
BAS86
Product data sheet
Fig 1.
Fig 3.
(nA)
I
(mA)
F(AV)
I
R
10
(1) T
(2) T
(3) T
10
10
10
10
250
200
150
100
10
−1
50
1
5
4
3
2
0
FR4 PCB, standard footprint
ambient temperature; derating curve
voltage; typical values
0
Average forward current as a function of
0
Reverse current as a function of reverse
amb
amb
amb
= 85 °C
= 25 °C
= −40 °C
10
50
20
30
100
(1)
(2)
(3)
T
amb
40
All information provided in this document is subject to legal disclaimers.
V
(°C)
mra540
mgc686
R
(V)
Rev. 4 — 8 September 2010
150
50
Fig 2.
Fig 4.
(mA)
(pF)
(1) T
(2) T
(3) T
C
10
I
F
10
10
d
12
10
−1
8
4
0
1
3
2
0
0
Forward current as a function of forward
voltage; typical values
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
(1)
amb
amb
amb
= 125 °C
= 85 °C
= 25 °C
(2) (3)
10
amb
0.4
= 25 °C
20
(1) (2) (3)
30
Schottky barrier diode
0.8
© NXP B.V. 2010. All rights reserved.
40
V
F
V
(V)
mgc687
BAS86
R
mld357
(V)
1.2
50
4 of 10

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