MMBD7000LT1G ON Semiconductor, MMBD7000LT1G Datasheet - Page 6
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MMBD7000LT1G
Manufacturer Part Number
MMBD7000LT1G
Description
DIODE SWITCH DUAL 100V SOT23
Manufacturer
ON Semiconductor
Specifications of MMBD7000LT1G
Voltage - Forward (vf) (max) @ If
1.1V @ 100mA
Current - Reverse Leakage @ Vr
3µA @ 100V
Current - Average Rectified (io) (per Diode)
200mA (DC)
Voltage - Dc Reverse (vr) (max)
100V
Reverse Recovery Time (trr)
4ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Series Connection
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Product
Switching Diodes
Peak Reverse Voltage
100 V
Forward Continuous Current
0.2 A
Max Surge Current
0.5 A
Configuration
Dual Series
Recovery Time
4 ns
Forward Voltage Drop
1.1 V
Maximum Reverse Leakage Current
3 uA
Operating Temperature Range
- 55 C to + 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Capacitance, Junction
1.5 pF
Current, Forward
200 mA
Current, Surge
500 mA
Package Type
SOT-23 (TO-236AB)
Power Dissipation
225 mW
Primary Type
Rectifier
Speed, Switching
Switching
Temperature, Junction, Maximum
+150 °C
Temperature, Operating
-55 to +150 °C
Time, Recovery
4 ns
Voltage, Forward
1.1 V
Voltage, Reverse
100 V
Rectifier Type
Small Signal Switching Diode
Peak Rep Rev Volt
100V
Avg. Forward Curr (max)
0.2A
Rev Curr
3uA
Peak Non-repetitive Surge Current (max)
0.5A
Forward Voltage
1.1V
Operating Temp Range
-55C to 150C
Rev Recov Time
4ns
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MMBD7000LT1GOS
MMBD7000LT1GOS
MMBD7000LT1GOSTR
MMBD7000LT1GOS
MMBD7000LT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBD7000LT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MMBD7000LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
Product Bulletin #16134
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Issue Date: 11 Jul 2008
Rev.07-02-06
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