1PS75SB45,115 NXP Semiconductors, 1PS75SB45,115 Datasheet - Page 7
![DIODE SCHOTTKY 40V 120MA SC75](/photos/5/31/53190/568-emt3_sot-416_sc-75_sot416_sml.jpg)
1PS75SB45,115
Manufacturer Part Number
1PS75SB45,115
Description
DIODE SCHOTTKY 40V 120MA SC75
Manufacturer
NXP Semiconductors
Datasheet
1.BAS40-04215.pdf
(21 pages)
Specifications of 1PS75SB45,115
Package / Case
EMT3 (SOT-416, SC-75-3)
Voltage - Forward (vf) (max) @ If
1V @ 40mA
Current - Reverse Leakage @ Vr
10µA @ 40V
Current - Average Rectified (io) (per Diode)
120mA (DC)
Voltage - Dc Reverse (vr) (max)
40V
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Common Cathode
Mounting Type
Surface Mount
Product
Schottky Diodes
Peak Reverse Voltage
40 V
Forward Continuous Current
120 mA
Max Surge Current
0.2 A
Configuration
Dual Common Cathode
Forward Voltage Drop
380 mV
Maximum Reverse Leakage Current
10 uA
Operating Temperature Range
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
1PS75SB45 T/R
1PS75SB45 T/R
934047510115
1PS75SB45 T/R
934047510115
NXP Semiconductors
6. Thermal characteristics
7. Characteristics
BAS40_1PSXXSB4X_SER_8
Product data sheet
Table 7.
[1]
[2]
[3]
Table 8.
T
[1]
Symbol
Per device
R
R
Symbol
Per diode
V
I
C
R
amb
F
th(j-a)
th(j-sp)
d
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Reflow soldering is the only recommended soldering method.
Soldering point at pins 2, 3, 5 and 6.
Pulse test: t
= 25
°
C unless otherwise specified.
Parameter
forward voltage
reverse current
diode capacitance
Thermal characteristics
Characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
p
SOT23
SOT143B
SOT363 (1PS88SB48)
SOT416
SOT666 (BAS40-05V)
SOT666 (BAS40-07V)
SOD123F
SOD323
SOD523
SOD882
SOT323
SOT363 (BAS40XY)
≤ 300 μs; δ ≤ 0.02.
BAS40 series; 1PSxxSB4x series
Rev. 08 — 13 January 2010
Conditions
I
I
I
V
V
V
F
F
F
R
R
R
= 1 mA
= 10 mA
= 40 mA
= 30 V
= 40 V
= 0 V; f = 1 MHz
Conditions
in free air
General-purpose Schottky diodes
[1]
[2]
[2]
[2]
[2]
[2]
[3]
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
-
Min
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
© NXP B.V. 2010. All rights reserved.
Max
500
416
225
416
330
450
500
260
500
833
450
625
Max
380
500
1
1
10
5
Unit
mV
mV
V
μA
μA
pF
Unit
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
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