BLF1043 NXP Semiconductors, BLF1043 Datasheet - Page 4

• Manufacturer Part Number: BLF1043
• Description: RF MOSFET Power RF LDMOS 10W UHF
• Manufacturer: NXP Semiconductors

Specifications of BLF1043

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 1.05 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 2.2 A
• Maximum Operating Temperature: + 200 C
• Package / Case: SOT-538-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF1043,112

Philips Semiconductors
2003 Mar 13
handbook, halfpage
handbook, halfpage
UHF power LDMOS transistor
Two-tone performance.
V
f
Fig.2
Single-tone performance.
V
f = 960 MHz.
Fig.4
1
(dB)
DS
DS
G p
(dB)
= 960 MHz; f
G p
= 26 V; I
= 26 V; I
22
18
14
10
20
16
12
8
0
0
Power gain and efficiency as functions of
peak envelope load power; typical values.
Power gain and efficiency as functions of
load power; typical values.
DQ
DQ
2
= 85 mA; T
= 85 mA; T
= 960.1 MHz.
4
G p
4
D
h
h
8
25 C;
25 C;
8
G p
D
12
12
P L (PEP)(W)
16
P L (W)
MDB152
MDB150
20
16
70
50
30
10
60
40
20
0
(%)
(%)
D
D
4
handbook, halfpage
handbook, halfpage
Two-tone performance.
V
f
Fig.3
V
Impedance measured at reference planes; see Fig.7.
Fig.5
1
(dBC)
DS
DS
= 960 MHz; f
d im
( )
Z i
= 26 V; I
= 26 V; I
20
40
60
80
10
0
6
2
2
6
800
0
Intermodulation distortion as a function of
peak envelope load power; typical values.
Input impedance as a function of frequency
(series components); typical values.
DQ
DQ
2
= 85 mA; T
= 85 mA; P
= 960.1 MHz.
840
4
h
880
L
= 10 W; T
X i
25 C;
r i
8
920
h
25 C.
d 3
d 5
d 7
Product specification
12
P L (PEP)(W)
960
BLF1043
f (MHz)
MDB151
MDB148
1000
16