SBE805-TL-E SANYO, SBE805-TL-E Datasheet

DIODE SCHOTTKY 30V 0.5A CPH5

SBE805-TL-E

Manufacturer Part Number
SBE805-TL-E
Description
DIODE SCHOTTKY 30V 0.5A CPH5
Manufacturer
SANYO
Datasheet

Specifications of SBE805-TL-E

Voltage - Forward (vf) (max) @ If
550mV @ 500mA
Current - Reverse Leakage @ Vr
30µA @ 15V
Current - Average Rectified (io) (per Diode)
500mA
Voltage - Dc Reverse (vr) (max)
30V
Reverse Recovery Time (trr)
10ns
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
2 Independent
Mounting Type
Surface Mount
Package / Case
5-CPH
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
869-1186-2
Ordering number : ENN7291
Features
Specifications
Absolute Maximum Ratings at Ta=25 C (Value per element)
Electrical Characteristics at Ta=25 C (Value per element)
Marking : SE
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Low forward voltage (V F max=0.55V).
Fast reverse recovery time (t rr max=10ns).
Composite type with 2 diodes contained in the CPH
package currently in use, improving the mounting
efficiency greatly.
The chips incorporated are both equivalent to
the SB05-03C.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
Symbol
Symbol
Rth(j-a)
V RRM
V RSM
I FSM
Tstg
V R
V F
I O
I R
Tj
t rr
C
50Hz sine wave, 1 cycle
I R =150 A
I F =500mA
V R =15V
V R =10V, f=1MHz
I F =I R =100mA, see specified Test Circuit.
SBE805
Conditions
Package Dimensions
unit : mm
1294
Conditions
1
5
0.95
2.9
4
30V, 500mA Rectifier
3
2
0.4
0.4
Silicon Schottky Barrier Diode
[SBE805]
min
30
O1002 TS IM TA-3609
Ratings
typ
0.15
Ratings
1 : Cathode
2 : Cathode
3 : Anode
4 : No Contact
5 : Anode
SANYO : CPH5
300
16
--55 to +125
--55 to +125
SBE805
0.05
max
0.55
500
30
35
30
10
5
No.7291-1/3
C / W
Unit
Unit
mA
pF
ns
V
V
A
V
V
C
C
A

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SBE805-TL-E Summary of contents

Page 1

... Tj Tstg Symbol Conditions =150 =500mA =15V =10V, f=1MHz =100mA, see specified Test Circuit. Rth(j-a) Silicon Schottky Barrier Diode SBE805 30V, 500mA Rectifier [SBE805] 2.9 0. 0.05 2 0.95 0 Cathode 2 : Cathode 3 : Anode Contact 5 : Anode 0.4 SANYO : CPH5 Ratings 500 --55 to +125 ...

Page 2

... Electrical Connection Cathode 2 : Cathode 3 : Anode Contact 5 : Anode 1 2 (Top view 0.1 0.2 0.3 0.4 Forward Voltage 100 1.0 10 Reverse Voltage SBE805 t rr Test Circuit Duty 10 1000 5 2 100 1 0 0.5 0.6 0.7 0 ITR10727 7 f=1MHz 0.01 100 ITR10729 100 Reverse Voltage ITR10728 ...

Page 3

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2002. Specifications and information herein are subject to change without notice. SBE805 PS No.7291-3/3 ...

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