M1MA142WKT1G ON Semiconductor, M1MA142WKT1G Datasheet - Page 3

• Manufacturer Part Number: M1MA142WKT1G
• Description: DIODE SW DUAL SS CC 80V SOT-323
• Manufacturer: ON Semiconductor

Specifications of M1MA142WKT1G

• Voltage - Forward (vf) (max) @ If: 1.2V @ 100mA
• Current - Reverse Leakage @ Vr: 100nA @ 75V
• Current - Average Rectified (io) (per Diode): 100mA (DC)
• Voltage - Dc Reverse (vr) (max): 80V
• Reverse Recovery Time (trr): 3ns
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Product: Switching Diodes
• Peak Reverse Voltage: 80 V
• Forward Continuous Current: 0.15 A
• Max Surge Current: 0.75 A
• Configuration: Dual Common Cathode
• Recovery Time: 3 ns
• Forward Voltage Drop: 1.2 V
• Maximum Reverse Leakage Current: 0.1 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: M1MA142WKT1G; M1MA142WKT1GOSTR

RECOVERY TIME EQUIVALENT TEST CIRCUIT
100
1.0
0.1
10
0.2
0.4
Figure 2. Forward Voltage
V
T
F
, FORWARD VOLTAGE (VOLTS)
A
= 85C
A
0.6
0.68
0.64
0.56
0.52
0.6
0
Figure 1. Recovery Time Equivalent Test Circuit
T
A
0.8
= 25C
T
A
= -- 40C
Figure 4. Diode Capacitance
2
R
1.0
V
L
R
, REVERSE VOLTAGE (VOLTS)
http://onsemi.com
1.2
4
3
0.001
0.01
V
1.0
0.1
R
10
0
INPUT PULSE
t
6
r
10%
t
t
90%
p
r
= 0.35 ns
= 2 ms
10
t
p
Figure 3. Reverse Current
V
R
, REVERSE VOLTAGE (VOLTS)
8
T
T
T
T
A
A
T
A
A
20
A
= 150C
= 125C
= 55C
= 25C
= 85C
t
30
OUTPUT PULSE
I
F
I
V
R
F
R
L
= 10 mA
= 100 Ω
= 6 V
40
t
rr
I
rr
= 0.1 I
R
50
t