TIC216M-S Bourns Inc., TIC216M-S Datasheet
TIC216M-S
Manufacturer Part Number
TIC216M-S
Description
Triacs 600V 6A TRIAC
Manufacturer
Bourns Inc.
Datasheet
1.TIC216D-S.pdf
(2 pages)
Specifications of TIC216M-S
Rated Repetitive Off-state Voltage Vdrm
600 V
Breakover Current Ibo Max
60 A
Off-state Leakage Current @ Vdrm Idrm
2 mA
Gate Trigger Voltage (vgt)
3 V
Gate Trigger Current (igt)
10 mA
Holding Current (ih Max)
30 mA
Forward Voltage Drop
1.7 V @ 8.4 A
Mounting Style
Through Hole
Package / Case
TO-220
Maximum Operating Temperature
+ 110 C
Minimum Operating Temperature
- 40 C
Repetitive Peak Forward Blocking Voltage
600 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
absolute maximum ratings over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
electrical characteristics at 25°C case temperature (unless otherwise noted )
† All voltages are with respect to Main Terminal 1.
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Repetitive peak off-state voltage (see Note 1)
Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note 2)
Peak on-state surge current full-sine-waveat (or below) 25°C case temperature (see Note 3)
Peak gate current
Peak gate power dissipation at (or below) 85°C case temperature (pulse width ≤ 200 µs)
Average gate power dissipation at (or below) 85°C case temperature (see Note 4)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
I
I
DRM
GT
●
●
●
●
●
R O D U C T
Sensitive Gate Triacs
6 A RMS
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
Max I
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge
4. This value applies for a maximum averaging time of 20 ms.
PARAMETER
Repetitive peak
off-state current
Gate trigger
current
the rate of 150 mA/°C.
may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
GT
of 5 mA (Quadrants 1 - 3)
I N F O R M A T I O N
V
V
V
V
V
D
supply
supply
supply
supply
= rated V
= +12 V†
= +12 V†
= -12 V†
= -12 V†
RATING
DRM
I
R
R
R
R
TEST CONDITIONS
G
L
L
L
L
= 0
= 10 Ω
= 10 Ω
= 10 Ω
= 10 Ω
MT2
MT1
G
Pin 2 is in electrical contact with the mounting base.
T
t
t
t
t
p(g)
p(g)
p(g)
p(g)
TIC216M
TIC216D
TIC216S
TIC216N
C
= 110°C
> 20 µs
> 20 µs
> 20 µs
> 20 µs
TO-220 PACKAGE
(TOP VIEW)
SYMBOL
I
P
T(RMS)
V
I
P
T
I
G(AV)
TSM
T
DRM
GM
T
GM
stg
C
L
MIN
1
2
3
SILICON TRIACS
TYP
-40 to +110
-40 to +125
TIC216 SERIES
VALUE
400
600
700
800
230
2.2
0.9
±1
60
6
MAX
±2
10
-5
-5
5
MDC2ACA
UNIT
UNIT
mA
mA
°C
°C
°C
W
W
V
A
A
A
1
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TIC216M-S Summary of contents
Page 1
... V supply † All voltages are with respect to Main Terminal DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. MT1 MT2 G Pin electrical contact with the mounting base. RATING TIC216D TIC216M TIC216S TIC216N TEST CONDITIONS DRM Ω = +12 V† ...
Page 2
... All voltages are with respect to Main Terminal 1. NOTES: 5. This parameter must be measured using pulse techniques, t the current carrying contacts are located within 3.2 mm from the device body. 6. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics: = 100 Ω µ ≤ ...