BAS56,215 NXP Semiconductors, BAS56,215 Datasheet - Page 5
![DIODE SW 60V 200MA HS SOT143B](/photos/5/30/53004/568-sot-143b_sml.jpg)
BAS56,215
Manufacturer Part Number
BAS56,215
Description
DIODE SW 60V 200MA HS SOT143B
Manufacturer
NXP Semiconductors
Datasheet
1.BAS56215.pdf
(12 pages)
Specifications of BAS56,215
Package / Case
SOT-143, SOT-143B, TO-253AA
Voltage - Forward (vf) (max) @ If
1V @ 200mA
Current - Reverse Leakage @ Vr
100nA @ 120V
Current - Average Rectified (io) (per Diode)
200mA (DC)
Voltage - Dc Reverse (vr) (max)
60V
Reverse Recovery Time (trr)
6ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
2 Independent
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
60 V
Forward Continuous Current
0.2 A
Max Surge Current
9 A
Configuration
Dual Parallel
Recovery Time
6 ns
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
0.1 uA
Operating Temperature Range
+ 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-1604-2
933742310215
BAS56 T/R
933742310215
BAS56 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAS56,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
BAS56
Product data sheet
Fig 1.
Fig 3.
(mA)
(1) V
(2) V
(μA)
10
10
I
300
200
100
10
F
I
R
10
−1
−2
0
2
1
0
T
Forward current as a function of forward
voltage; typical values
Reverse current as a function of junction
temperature
0
j
R
R
= 25 °C
= 60 V; maximum values
= 60 V; typical values
(1)
100
(2)
1
T
V
j
F
(°C)
(V)
All information provided in this document is subject to legal disclaimers.
mbh279
mbh282
200
2
Rev. 3 — 29 June 2010
Fig 2.
Fig 4.
I
FSM
(A)
10
(pF)
C
10
2.0
1.5
1.0
0.5
10
d
−1
1
0
2
1
Based on square wave currents.
T
Non-repetitive peak forward current as a
function of pulse duration
0
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
j
= 25 °C; prior to surge
10
j
= 25 °C
10
10
2
High-speed double diode
20
10
© NXP B.V. 2010. All rights reserved.
3
V
R
t
p
(V)
(μs)
mbg703
mbh283
BAS56
10
30
4
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