5962-9232404MYA Cypress Semiconductor Corp, 5962-9232404MYA Datasheet

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5962-9232404MYA

Manufacturer Part Number
5962-9232404MYA
Description
5962-9232404MYA
Manufacturer
Cypress Semiconductor Corp
Type
NVSRAMr
Datasheet

Specifications of 5962-9232404MYA

Word Size
8b
Organization
8Kx8
Density
64Kb
Interface Type
Parallel
Access Time (max)
55ns
Operating Supply Voltage (typ)
5V
Package Type
CLCC
Operating Temperature Classification
Military
Operating Supply Voltage (max)
5.5V
Operating Supply Voltage (min)
4.5V
Operating Temp Range
-55C to 125C
Pin Count
28
Mounting
Surface Mount
Supply Current
80mA
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
5962-9232404MYA
Manufacturer:
TI
Quantity:
320
Part Number:
5962-9232404MYA
Manufacturer:
SIMTEK
Quantity:
95
LOGIC BLOCK DIAGRAM
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
FEATURES
• 35, 45 and 55ns Access Times
• 17, 20 and 25ns Output Enable Access
• Unlimited Read and Write to
• Software
• Automatic
• 100,000
• 10 year data retention in
• Automatic
• Software
• Unlimited
• Single 5V
• Available in multiple standard packages
A
A
A
A
A
A
A
A
12
0
1
2
3
4
5
6
7
3
4
5
6
7
8
9
STORE
STORE
RECALL
RECALL
STORE
RECALL
10% Operation
cycles to
A
Initiation
0
Initiation
Timing
COLUMN DECODER
cycles from
A
on Power Up
STATIC RAM
1
COLUMN I/O
256 x 256
ARRAY
A
2
EEPROM ARRAY
EEPROM
EEPROM
A
10
256 x 256
SRAM
A
11
EEPROM
RECALL
STORE
MIL-STD-883/SMD # 5962-92324
8K x 8 Nonvolatile Static RAM
CONTROL
A
STORE/
RECALL
0
A
4-31
12
DESCRIPTION
The Simtek STK11C68-M is a fast static
and 55ns), with a nonvolatile electrically-erasable
(
cell. The
number of times, while independent nonvolatile data
resides in
the
SRAM
quences. It combines the high performance and ease
of use of a fast
The STK11C68-M is pin compatible with industry stan-
dard
ceramic DIP or 28-pad LCC package. Commercial and
industrial devices are also available.
EEPROM
EEPROM
W
G
E
SRAM
(
RECALL
DQ
DQ
) element incorporated in each static memory
SRAM
A
A
A
A
A
A
A
EEPROM
6
5
4
3
2
1
0
0
1
s and is available in a 28-pin 300 mil
10
11
12
PIN CONFIGURATIONS
4
5
6
7
8
9
High Performance
13
(
3
28 - LCC
STORE
TOP VIEW
14
SRAM
) are initiated through software se-
2
STK11C68-M
can be read and written an unlimited
15
A
W
DQ
E
G
V
V
1
0
CC
SS
CMOS nvSRAM
. Data transfers from the
28 27
16
- A
0
- DQ
17
PIN NAMES
12
), or from the
26
25
24
23
22
21
20
19
18
with nonvolatile data integrity.
7
NC
A
A
A
G
DQ
A
E
DQ
11
8
9
10
7
6
Address Inputs
Write Enable
Data In/Out
Chip Enable
Output Enable
Power (+5V)
Ground
DQ
DQ
DQ
A
V
NC
A
A
A
A
A
A
A
A
SS
12
28 - 300 C-DIP
7
6
5
4
3
2
1
0
0
1
2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
EEPROM
STK11C68-M
28
27
26
25
24
23
22
21
20
19
18
17
16
15
RAM
V
W
NC
A
A
G
A
E
DQ
DQ
DQ
DQ
DQ
A
CC
11
8
9
10
SRAM
7
6
5
4
3
(35, 45
to the
PROM
to

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5962-9232404MYA Summary of contents

Page 1

... Nonvolatile Static RAM MIL-STD-883/SMD # 5962-92324 DESCRIPTION The Simtek STK11C68 fast static and 55ns), with a nonvolatile electrically-erasable ( ) element incorporated in each static memory EEPROM cell. The SRAM number of times, while independent nonvolatile data resides in EEPROM the EEPROM ( SRAM RECALL quences. It combines the high performance and ease ...

Page 2

STK11C68-M ABSOLUTE MAXIMUM RATINGS Voltage on typical input relative –0.6V to 7.0V SS Voltage on DQ and ...

Page 3

READ CYCLES #1 & #2 SYMBOLS NO. #1, #2 Alt Chip Enable Access Time ELQV ACS Read Cycle Time AVAV Address Access Time AVQV ...

Page 4

STK11C68-M WRITE CYCLES #1 & #2; G high SYMBOLS NO Alt Write Cycle Time AVAV AVAV Write Pulse Width WLWH WLEH Chip Enable to ...

Page 5

WRITE CYCLE #1: W CONTROLLED ADDRESS AVWL W DATA IN DATA OUT PREVIOUS DATA WRITE CYCLE #2: E CONTROLLED ADDRESS 18 t AVEL E W DATA IN DATA OUT AVAV 14 t ELWH 17 ...

Page 6

STK11C68-M NONVOLATILE MEMORY OPERATION MODE SELECTION (hex 0000 1555 0AAA 1FFF 10F0 0F0F L H 0000 1555 0AAA 1FFF 10F0 0F0E Note ...

Page 7

STORE/RECALL CYCLE SYMBOLS NO. PARAMETER #1 Alt STORE/RECALL Initiation Cycle Time AVAV Chip Enable to Output Inactive ELQZ q STORE Cycle Time STORE ELQXS r RECALL Cycle Time 25 t ...

Page 8

STK11C68-M The STK11C68-M has two separate modes of opera- tion: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred from SRAM to EEPROM or from EEPROM to ...

Page 9

Internally, RECALL is a two step procedure. First, the SRAM data is cleared and second, the nonvolatile information is transferred into the SRAM cells. The RECALL operation in no way alters the data in the EEPROM cells. The nonvolatile data ...

Page 10

... STK11C68-M STK11C68 - 5962-92324 ORDERING INFORMATION Temperature Range M = Military (-55 to 125 degrees C) Access Time 35 = 35ns 45 = 45ns 55 = 55ns Package C = Ceramic 28 pin 300-mil DIP with gold lead finish K = Ceramic 28 pin 300-mil DIP with solder DIP finish L = Ceramic 28 pin LCC Retention / Endurance 10 years / 100,000 cycles ...

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