MTZJT-7730B Rohm Semiconductor, MTZJT-7730B Datasheet - Page 4

• Manufacturer Part Number: MTZJT-7730B
• Description: DIODE ZENER 30V 500MW DO-34
• Manufacturer: Rohm Semiconductor

Specifications of MTZJT-7730B

• Voltage - Zener (nom) (vz): 30V
• Current - Reverse Leakage @ Vr: 200nA @ 23V
• Power - Max: 500mW
• Impedance (max) (zzt): 55 Ohm
• Mounting Type: Through Hole
• Package / Case: DO-204AG, DO-34, Axial
• Operating Temperature: -65°C ~ 175°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Tolerance: -
• Voltage - Forward (vf) (max) @ If: -

Diodes
0.001
1000
0.01
100
28.8
28.7
28.6
28.5
28.4
28.3
0.1
10
10
1
1
0.1
25
Ta=-25℃
26
Zz-Iz CHARACTERISTICS
Vz-Iz CHARACTERISTICS
Ta=25℃
ZENER CURRENT(mA)
ZENER VOLTAGE:Vz(V)
27
Vz DISRESION MAP
28
AVE:28.55V
Ta=75℃
1
29
30
Ta=125℃
31
Ta=25℃
n=30pcs
IZ=5mA
Ta=175℃
32
10
33
0.0001
10000
0.001
1000
0.01
100
0.1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
10
1
1
0
0
REVERSE VOLTAGE：VR(V)
5
VR-IR CHARACTERISTICS
IR DISRESION MAP
AVE:0.084nA
10
15
Ta=125℃
Ta=175℃
Ta=75℃
Ta=25℃
Ta=-25℃
Ta=25℃
20
VR=23V
n=30pcs
25
1000
100
100
10
90
80
70
60
50
40
30
20
10
1
0
0
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
5
Ct DISRESION MAP
10
AVE:23.3pF
Rev.D
15
MTZJ30B
f=1MHz
20
Ta=25℃
f=1MHz
VR=0V
n=10pcs
25
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