MGP15N35CL ON Semiconductor, MGP15N35CL Datasheet - Page 3

• Manufacturer Part Number: MGP15N35CL
• Description: IGBT Transistors 15A 350V Ignition
• Manufacturer: ON Semiconductor

Specifications of MGP15N35CL

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 380 V
• Collector-emitter Saturation Voltage: 10 V
• Maximum Gate Emitter Voltage: 22 V
• Gate-emitter Leakage Current: 150 W
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-220-3
• Continuous Collector Current Ic Max: 15 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Channel Type: N
• Collector Current (dc) (max): 15A
• Package Type: TO-220AB
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 175C
• Operating Temperature Classification: Military
• Transistor Type: IGBT
• Dc Collector Current: 15A
• Collector Emitter Voltage Vces: 360V
• Power Dissipation Pd: 150W
• Collector Emitter Voltage V(br)ceo: 360V
• Operating Temperature Range: -55°C To +175°C
• Rohs Compliant: No
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

3. Pulse Test: Pulse Width v 300 μS, Duty Cycle v 2%.
*Maximum Value of Characteristic across Temperature Range.
ELECTRICAL CHARACTERISTICS
ON CHARACTERISTICS (continued)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
Collector−to−Emitter On−Voltage
Collector−to−Emitter On−Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn−Off Delay Time (Inductive)
Fall Time (Inductive)
Turn−Off Delay Time (Resistive)
Fall Time (Resistive)
Turn−On Delay Time
Rise Time
Characteristic
(Note 3)
(continued)
(Note 3)
Symbol
V
V
C
C
t
t
t
C
CE(on)
CE(on)
d(off)
d(off)
d(on)
gfs
OSS
RSS
ISS
t
t
t
f
f
r
http://onsemi.com
R
R
R
R
R
R
V
V
V
V
V
I
V
V
V
C
G
G
G
G
G
G
CC
CC
CC
CC
CE
CC
CC
CC
= 10 A, V
= 1.0 kΩ, L = 300 μH
= 1.0 kΩ, L = 300 μH
Test Conditions
= 1.0 kΩ, R
= 1.0 kΩ, R
= 1.0 kΩ, R
= 1.0 kΩ, R
= 300 V, I
= 300 V, I
= 300 V, I
= 300 V, I
= 5.0 V, I
= 25 V, V
= 10 V, I
= 10 V, I
V
V
V
V
V
3
f = 1.0 MHz
I
I
I
I
I
C
GE
GE
GE
GE
GE
C
C
C
C
= 6.0 A,
= 10 A,
= 15 A,
= 20 A,
= 25 A,
= 4.0 V
= 4.0 V
= 4.0 V
= 4.0 V
= 4.0 V
GE
C
C
C
C
C
C
C
GE
L
L
L
L
= 6.5 A
= 6.5 A
= 4.5 V
= 6.0 A
= 6.5 A
= 6.5 A
= 6.5 A
= 6.5 A
= 46 Ω,
= 46 Ω,
= 1.5 Ω
= 1.5 Ω
= 0 V
Temperature
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
J
J
T
T
T
T
T
T
T
T
T
T
T
J
J
J
J
J
J
J
J
J
J
J
J
J
J
J
J
J
= −40°C to
= −40°C to
J
J
J
J
J
J
J
J
J
J
J
150°C
150°C
= 150°C
= −40°C
= 150°C
= −40°C
= 150°C
= −40°C
= 150°C
= −40°C
= 150°C
= −40°C
= 150°C
= 150°C
= 150°C
= 150°C
= 150°C
= 150°C
= 150°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
1.85
Min
1.0
0.9
1.1
1.3
1.2
1.3
1.6
1.7
1.6
1.9
2.1
2.1
2.5
2.0
8.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
1000
1.95
2.15
Typ
100
1.3
1.2
1.4
1.6
1.5
1.6
2.0
1.9
2.2
2.4
2.5
2.9
2.4
1.5
5.0
4.0
4.5
7.0
4.0
4.5
1.0
1.0
4.5
5.0
15
10
13
16
1300
Max
2.25
2.45
1.7*
1.9*
2.3*
2.7*
3.3*
130
1.6
1.5
1.9
1.8
2.2
2.5
2.9
2.8
1.8
8.0
15*
1.5
1.5
6.0
6.0
25
10
10
10
10
10
20
20
Mhos
μSec
μSec
μSec
Unit
V
V
pF
DC
DC