MGP15N35CL ON Semiconductor, MGP15N35CL Datasheet - Page 10

• Manufacturer Part Number: MGP15N35CL
• Description: IGBT Transistors 15A 350V Ignition
• Manufacturer: ON Semiconductor

Specifications of MGP15N35CL

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 380 V
• Collector-emitter Saturation Voltage: 10 V
• Maximum Gate Emitter Voltage: 22 V
• Gate-emitter Leakage Current: 150 W
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-220-3
• Continuous Collector Current Ic Max: 15 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Channel Type: N
• Collector Current (dc) (max): 15A
• Package Type: TO-220AB
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 175C
• Operating Temperature Classification: Military
• Transistor Type: IGBT
• Dc Collector Current: 15A
• Collector Emitter Voltage Vces: 360V
• Power Dissipation Pd: 150W
• Collector Emitter Voltage V(br)ceo: 360V
• Operating Temperature Range: -55°C To +175°C
• Rohs Compliant: No
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
2
3
D
0.13 (0.005)
3 PL
S
M
T
B
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PACKAGE DIMENSIONS
USA/Canada
Phone: [phone]
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M
K
http://onsemi.com
CASE 418B−03
C
H
ISSUE D
D
2
PAK
10
A
E
J
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: INCH.
Y14.5M, 1982.
STYLE 4:
DIM
A
B
C
D
G
H
K
E
J
S
V
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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0.340
0.380
0.160
0.020
0.045
0.080
0.018
0.090
0.575
0.045
MIN
0.100 BSC
INCHES
0.380
0.405
0.190
0.035
0.055
0.110
0.025
0.110
0.625
0.055
MAX
14.60
MILLIMETERS
MIN
8.64
9.65
4.06
0.51
1.14
2.03
0.46
2.29
1.14
2.54 BSC
10.29
15.88
MGP15N35CL/D
MAX
9.65
4.83
0.89
1.40
2.79
0.64
2.79
1.40