MGP15N35CL ON Semiconductor, MGP15N35CL Datasheet

MGP15N35CL

Manufacturer Part Number

MGP15N35CL

Description

IGBT Transistors 15A 350V Ignition

Manufacturer

ON Semiconductor

Datasheet

1.MGP15N35CL.pdf (10 pages)

Specifications of MGP15N35CL

Configuration

Single

Collector- Emitter Voltage Vceo Max

380 V

Collector-emitter Saturation Voltage

10 V

Maximum Gate Emitter Voltage

22 V

Gate-emitter Leakage Current

150 W

Power Dissipation

150 W

Maximum Operating Temperature

+ 175 C

Package / Case

TO-220-3

Continuous Collector Current Ic Max

15 A

Minimum Operating Temperature

- 55 C

Mounting Style

Through Hole

Channel Type

Collector Current (dc) (max)

15A

Package Type

TO-220AB

Pin Count

3 +Tab

Mounting

Through Hole

Operating Temperature (min)

-55

Operating Temperature (max)

175C

Operating Temperature Classification

Military

Transistor Type

IGBT

Dc Collector Current

15A

Collector Emitter Voltage Vces

360V

Power Dissipation Pd

150W

Collector Emitter Voltage V(br)ceo

360V

Operating Temperature Range

-55Â°C To +175Â°C

Rohs Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MGP15N35CL

Manufacturer:

Quantity:

12 500

Current page: 1 of 10
Download datasheet (251Kb)

MGP15N35CL,

MGB15N35CL

Ignition IGBT

15 Amps, 350 Volts

N−Channel TO−220 and D

monolithic circuitry integrating ESD and Over−Voltage clamped

protection for use in inductive coil drivers applications. Primary uses

include Ignition, Direct Fuel Injection, or wherever high voltage and

high current switching is required.

•

MAXIMUM RATINGS

UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE

CHARACTERISTICS

July, 2006 − Rev. 5

Collector−Emitter Voltage

Collector−Gate Voltage

Gate−Emitter Voltage

Collector Current−Continuous

ESD (Human Body Model)

ESD (Machine Model) R = 0 Ω, C = 200 pF

Total Power Dissipation @ T

Operating and Storage Temperature Range

Single Pulse Collector−to−Emitter Avalanche

Reverse Avalanche Energy

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features

System Applications

Stress Applied to Load

Microprocessor Devices

Ideal for Coil−On−Plug, IGBT−On−Coil, or Distributorless Ignition

High Pulsed Current Capability up to 50 A

Gate−Emitter ESD Protection

Temperature Compensated Gate−Collector Voltage Clamp Limits

Integrated ESD Diode Protection

Low Threshold Voltage to Interface Power Loads to Logic or

Low Saturation Voltage

Optional Gate Resistor (R

@ T

R = 1500 Ω, C = 100 pF

Derate above 25°C

Energy

= 2.0 mH, Starting T

Pk I

= 50 V, V

= 100 V, V

= 25.8 A, Starting T

= 25°C − Pulsed

Characteristic

Rating

= 5.0 V, Pk I

= 20 V, L = 3.0 mH,

(−55°C ≤ T

= 25°C

= 150°C

Preferred Device

= 25°C

)

= 17.4 A, L

= 14.2 A, L

≤ 175°C)

≤ 175°C unless otherwise noted)

PAK

Symbol

AS(R)

ESD

, T

CES

CER

stg

Value

−55 to

Value

1000

300

200

380

800

150

175

8.0

1.0

Watts

W/°C

Unit

°C

Preferred devices are recommended choices for future use

and best overall value.

MGP15N35CL

MGB15N35CLT4

Gate

Device

G15N35CL

YWW

Collector

CE(on)

Collector

350 VOLTS (Clamped)

ORDERING INFORMATION

CASE 221A

MARKING DIAGRAMS

TO−220AB

& PIN ASSIGNMENTS

STYLE 9

http://onsemi.com

15 AMPERES

Emitter

@ 10 A = 1.8 V Max

N−Channel

Package

TO−220

D2PAK

G15N35CL = Device Code

Publication Order Number:

Gate

G15N35CL

YWW

800 Tape & Reel

Collector

= Year

= Work Week

MGP15N35CL/D

CASE 418B

50 Units/Rail

STYLE 4

Shipping

PAK

Emitter

Related parts for MGP15N35CL

MGP15N35CL Summary of contents

Page 1

... STYLE 9 MARKING DIAGRAMS 3 & PIN ASSIGNMENTS 4 4 Collector Collector G15N35CL YWW G15N35CL YWW 1 3 Gate Emitter Collector Emitter 2 G15N35CL = Device Code Collector Y = Year WW = Work Week ORDERING INFORMATION Device Package Shipping TO−220 50 Units/Rail D2PAK 800 Tape & Reel Publication Order Number: MGP15N35CL/D 4 ...

Page 2

THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector−Emitter Clamp Voltage Zero Gate Voltage Collector Current Reverse Collector−Emitter ...

Page 3

ELECTRICAL CHARACTERISTICS Characteristic ON CHARACTERISTICS (continued) Collector−to−Emitter On−Voltage Collector−to−Emitter On−Voltage Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 3) Turn−Off Delay Time (Inductive) Fall Time (Inductive) Turn−Off Delay Time (Resistive) Fall Time (Resistive) Turn−On Delay ...

Page 4

TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted 10 5 25° COLLECTOR TO EMITTER VOLTAGE (VOLTS) CE ...

Page 5

T = 25° 150° INDUCTOR (mH) Figure 7. Minimum Open Secondary Latch Current vs. Inductor 25° 150° ...

Page 6

R , EXTERNAL GATE RESISTANCE (Ω) G Figure 13. Switching Speed vs. External Gate Resistance 10 Duty Cycle = 0.5 1 0.2 0.1 0.05 0.02 ...

Page 7

Figure 16. Test Fixture for Transient Thermal Curve (48 square inches of 1/8, thick aluminum) 100 100 ms 0.1 0. COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 17. Single Pulse Safe Operating Area (Mounted on an Infinite ...

Page 8

(pk 0 DUTY CYCLE 0. COLLECTOR−EMITTER VOLTAGE ...

Page 9

PACKAGE DIMENSIONS TO−220 THREE−LEAD TO−220AB CASE 221A−09 ISSUE AA NOTES: SEATING −T− 1. DIMENSIONING AND TOLERANCING PER ANSI PLANE Y14.5M, 1982. 2. ...

Page 10

... J 0.018 0.025 0.46 0.64 K 0.090 0.110 2.29 2.79 S 0.575 0.625 14.60 15.88 V 0.045 0.055 1.14 1.40 STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MGP15N35CL/D ...

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