FMC6G20US60 Fairchild Semiconductor, FMC6G20US60 Datasheet - Page 6

• Manufacturer Part Number: FMC6G20US60
• Description: IGBT Modules
• Manufacturer: Fairchild Semiconductor

Specifications of FMC6G20US60

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.2 V
• Continuous Collector Current At 25 C: 20 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 57 W
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: PM-AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Fig 13. Switching Loss vs. Collector Current
Fig 15. SOA Characteristics
Fig 17. RBSOA Characteristics
1000
0.01
100
100
0.1
0.1
80
10
10
1
1
0.3
10
0
Common Emitter
V
T
T
I
I
C
Single Nonrepetitive
Pulse T
Curves must be derated
linearly with increase
in temperature
Single Nonrepetitive
Pulse T
V
R
C
C
C
GE
GE
MAX. (Continuous)
G
MAX. (Pulsed)
= 25℃ ━━
= 125℃ ------
= 10
= ± 15V, R
= 15V
100
C
J
15
≤ 125℃
= 25℃
Collector-Emitter Voltage, V
Collector-Emitter Voltage, V
1
G
200
= 10
Collector Current, I
20
DC Operation
300
10
25
400
30
C
1㎳
[A]
500
CE
CE
100
100us
[V]
[V]
Eon
35
600
50us
Eoff
Eoff
1000
700
40
Fig 16. Turn-Off SOA Characteristics
Fig 18. Transient Thermal Impedance
Fig 14. Gate Charge Characteristics
0.01
100
0.1
10
10
15
12
1
1
9
6
3
0
10
1
0
-5
Common Emitter
R
T
C
L
= 15
= 25℃
10
10
-4
Collector-Emitter Voltage, V
Rectangular Pulse Duration [sec]
Gate Charge, Q
10
10
20
Safe Operating Area
V
-3
GE
= 20V, T
V
CC
10
= 100 V
30
-2
C
= 100℃
g
[ nC ]
100
10
40
-1
IGBT
DIODE :
CE
[V]
300 V
200 V
10
50
:
0
FMC6G20US60 Rev. A3
1000
10
60
1