BPW96 Vishay, BPW96 Datasheet - Page 4

• Manufacturer Part Number: BPW96
• Description: Photodetector Transistors NPN Phototransistor 70V 150mW 850nm
• Manufacturer: Vishay

Specifications of BPW96

• Voltage - Collector Emitter Breakdown (max): 70V
• Current - Collector (ic) (max): 50mA
• Current - Dark (id) (max): 200nA
• Wavelength: 850nm
• Viewing Angle: 40°
• Power - Max: 150mW
• Mounting Type: Through Hole
• Orientation: Top View
• Package / Case: Radial, 5mm Dia (T 1 3/4)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BPW96B, BPW96C
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
www.vishay.com
422
Fig. 8 - Relative Spectral Sensitivity vs. Wavelength
94 8348
1.0
0.8
0.6
0.4
0.2
0
400
Drawing-No.: 6.544-5086.01-4
Issue:1; 01.07.96
96 12192
600
λ - Wavelength (nm)
1
+ 0.2
- 0.1
For technical questions, contact: [e-mail]
800
C
Silicon NPN Phototransistor, RoHS Compliant
1000
Ø 5
2.54 nom.
0.8
0.63
E
± 0.15
+ 0.2
- 0.1
+ 0.2
- 0.1
Chip position
Fig. 9 - Relative Radiant Sensitivity vs. Angular Displacement
94 8299
1.0
0.9
0.8
0.7
0.5
0.6
Area not plane
+ 0.15
0.4
0.2
technical drawings
according to DIN
specifications
0°
0
10°
Document Number: 81532
20°
Rev. 1.7, 05-Sep-08
30°
40°
50°
60°
70°
80°