BPW96 Vishay, BPW96 Datasheet - Page 3

• Manufacturer Part Number: BPW96
• Description: Photodetector Transistors NPN Phototransistor 70V 150mW 850nm
• Manufacturer: Vishay

Specifications of BPW96

• Voltage - Collector Emitter Breakdown (max): 70V
• Current - Collector (ic) (max): 50mA
• Current - Dark (id) (max): 200nA
• Wavelength: 850nm
• Viewing Angle: 40°
• Power - Max: 150mW
• Mounting Type: Through Hole
• Orientation: Top View
• Package / Case: Radial, 5mm Dia (T 1 3/4)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BASIC CHARACTERISTICS
T
Document Number: 81532
Rev. 1.7, 05-Sep-08
amb
Fig. 3 - Relative Collector Current vs. Ambient Temperature
Fig. 2 - Collector Dark Current vs. Ambient Temperature
= 25 °C, unless otherwise specified
94 8296
94 8239
94 8304
Fig. 4 - Collector Light Current vs. Irradiance
0.01
10
10
10
10
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.1
10
4
3
2
1
1
20
0.01
0
T
V
E
T
λ
amb
amb
CE
e
= 1 mW/cm
20
= 950 nm
= 5 V
- Ambient Temperature (°C)
- Ambient Temperature (°C)
E
40
e
- Irradiance (mW/cm
V
BPW96C
0.1
CE
Silicon NPN Phototransistor, RoHS Compliant
40
= 20 V
2
60
For technical questions, contact: [e-mail]
60
λ
1
V
BPW96B
= 950 nm
80
CE
2
80
)
= 5 V
100
100
10
Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage
Fig. 5 - Collector Light Current vs. Collector Emitter Voltage
94 8297
94 8301
Fig. 7 - Turn-on/Turn-off Time vs. Collector Current
94 8293
0.1
10
10
8
6
4
2
0
1
8
6
4
2
0
0.1
0.1
0
BPW96B
V
V
2
CE
CE
I
- Collector Emitter Voltage (V)
C
- Collector Emitter Voltage (V)
Vishay Semiconductors
- Collector Current (mA)
BPW96B, BPW96C
4
1
1
0.05 mW/cm²
0.1 mW/cm²
6
E
0.2 mW/cm²
0.5 mW/cm²
e
= 1 mW/cm²
R
λ
V
f = 1 MHz
L
CE
8
= 950 nm
= 100 Ω
= 5 V
10
10
λ
10
t
on
= 950 nm
t
off
12
www.vishay.com
100
100
14
421