MB4S/30 Vishay, MB4S/30 Datasheet - Page 3
![Diode](/photos/22/5/220516/3758022_sml.jpg)
MB4S/30
Manufacturer Part Number
MB4S/30
Description
Diode
Manufacturer
Vishay
Datasheet
1.MB4S30.pdf
(4 pages)
Specifications of MB4S/30
Forward Current If(av)
500mA
Bridge Rectifier Case Style
TO-269AA
Forward Voltage
1V
Mounting Type
Through Hole
Diode Type
Bridge Rectifier
Peak Reflow Compatible (260 C)
No
Current Rating
500mA
Phase Type
Single Phase
Number Of Elements
1
Peak Rep Rev Volt
400V
Rms Voltage (max)
280V
Peak Non-repetitive Surge Current (max)
35A
Avg. Forward Curr (max)
800mA
Rev Curr
5uA
Package Type
TO-269AA
Operating Temp Range
-55C to 150C
Pin Count
4
Mounting
Surface Mount
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88661
Revision: 01-Feb-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
Figure 3. Typical Forward Voltage Characteristics Per Diode
0.01
0.01
100
0.1
0.1
10
10
1
1
0.3
0
Percent of Rated Peak Reverse Voltage (%)
0.5
Instantaneous Forward Voltage (V)
20
0.114 (2.90)
0.094 (2.40)
T
J
0.7
= 150 °C
T
T
0.106 (2.70)
0.090 (2.30)
0.144 (3.65)
J
J
0.161 (4.10)
40
= 125 °C
= 25 °C
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0.9
0.029 (0.74)
0.017 (0.43)
Pulse Width = 300 µs
1 % Duty Cycle
60
T
J
1.1
= 25 °C
0.095 (2.41)
0.195 (4.95)
0.105 (2.67)
0.179 (4.55)
80
1.3
TO-269AA (MBS)
0.0075 (0.19)
0.0065 (0.16)
0.038 (0.96)
0.019 (0.48)
0.272 (6.90)
0.252 (6.40)
100
1.5
0 to 8°
0.058 (1.47)
0.054 (1.37)
0.195 (4.95)
0.008 (0.20)
0.004 (0.10)
0.114 (2.90)
0.110 (2.80)
0.205 (5.21)
0.016 (0.41)
0.006 (0.15)
0.018 (0.46)
0.014 (0.36)
0.049 (1.24)
0.039 (0.99)
0.062 (1.57)
0.058 (1.47)
30
25
20
15
10
5
0
Figure 5. Typical Junction Capacitance Per Diode
0.1
(0.58 MIN.)
Vishay General Semiconductor
0.023 MIN.
(0.76 MIN.)
0.030 MIN.
Mounting Pad Layout
MB2S, MB4S & MB6S
1
Reverse Voltage (V)
0.105 (2.67)
0.095 (2.41)
10
0.272 MAX.
(6.91 MAX.)
T
f = 1.0 MHz
V
J
sig
= 25 °C
100
= 50 mVp-p
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1000
3