CM100TF-28H Powerex Inc, CM100TF-28H Datasheet - Page 2

• Manufacturer Part Number: CM100TF-28H
• Description: TRANSISTOR,IGBT POWER MODULE,3-PH BRIDGE,1.4kV V(BR)CES,100A I(C)
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r

Specifications of CM100TF-28H

• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 1400V
• Vce(on) (max) @ Vge, Ic: 4.2V @ 15V, 100A
• Current - Collector (ic) (max): 100A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 20nF @ 10V
• Power - Max: 780W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant

356
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM100TF-28H
Six-IGBT IGBTMOD™ H-Series Module
100 Amperes/1400 Volts
Absolute Maximum Ratings, T
Characteristics
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E-SHORT)
Gate-Emitter Voltage (C-E-SHORT)
Collector Current
Peak Collector Current
Diode Forward Current
Diode Forward Pulse Current
Power Dissipation
Max. Mounting Torque M5 Terminal Screws
Max. Mounting Torque M5 Mounting Screws
Module Weight (Typical)
V Isolation
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics, T
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Diode Forward Voltage
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switch
Times
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
j
= 25 C unless otherwise specified
j
= 25 C unless otherwise specified
V
V
Symbol
Symbol
Symbol
R
R
R
CE(sat)
t
t
I
I
C
GE(th)
V
C
C
d(on)
d(off)
GES
th(c-f)
CES
Q
j
th(j-c)
th(j-c)
Q
t
oes
FM
res
t
ies
t
= 25 C unless otherwise specified
rr
G
r
f
rr
j
= 25 C unless otherwise specified
Per Module, Thermal Grease Applied
V
I
C
CC
V
V
I
I
GE
GE1
= 100A, V
E
E
= 800V, I
V
= 100A, di
= 100A, di
V
V
I
I
C
= 0V, V
C
CC
I
CE
GE
E
= V
= 10mA, V
= 100A, V
= 100A, V
Test Conditions
Test Conditions
Test Conditions
= V
= 800V, I
= V
GE2
Per FWDi
Per IGBT
GE
C
CE
CES
GES
= 100A, V
= 15V, R
E
E
= 15V, T
/dt = –200A/ s
/dt = –200A/ s
= 10V, f = 1MHz
, V
, V
GE
CE
C
GS
GE
CE
= 100A,
= 15V
= 10V
= 0V
G
= 0V
= 0V
j
GS
= 150 C
= 3.1
Symbol
V
V
V
I
T
I
ECM
I
= 15V
RMS
CES
GES
P
CM
I
EC
T
stg
–
–
–
C
d
j
Min.
Min.
Min.
5.0
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
CM100TF-28H
–40 to 150
–40 to 125
1400
2500
200*
200*
100
100
780
830
17
17
20
2.95
Typ.
510
Typ.
Typ.
6.5
3.1
1.0
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.025
Max.
4.2**
Max.
Max.
0.16
0.35
250
400
300
500
300
1.0
0.5
8.0
3.8
–
–
20
–
7
4
Amperes
Amperes
Amperes
Amperes
Grams
Watts
Units
Volts
Volts
Volts
in-lb
in-lb
Units
Volts
Volts
Volts
Volts
Units
Units
C
C
mA
C/W
C/W
C/W
nC
nF
nF
nF
ns
ns
ns
ns
ns
A
C