SIA444DJT-T1-GE3 Vishay, SIA444DJT-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SIA444DJT-T1-GE3
• Description: MOSFET,N CH,DIODE,30V,12A,SC70 PPAK
• Manufacturer: Vishay

Specifications of SIA444DJT-T1-GE3

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.014ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.017 Ohms
• Forward Transconductance Gfs (max / Min): 24 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 12 A
• Power Dissipation: 19 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-70
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SiA444DJT
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67056.
www.vishay.com
6
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.01
0.1
0.1
1
1
10
10
-4
-4
0.05
0.02
0.2
0.2
0.1
Duty Cycle = 0.5
Duty Cycle = 0.5
Single Pulse
0.02
Single Pulse
0.05
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
This document is subject to change without notice.
10
-2
10
-3
New Product
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-1
1
10
-2
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
= P
t
S11-0649-Rev. B, 11-Apr-11
2
DM
100
Document Number: 67056
www.vishay.com/doc?91000
Z
thJA
thJA
t
t
1
2
(t)
= 80 C/W
1000
10
-1