GT10Q101 Toshiba, GT10Q101 Datasheet - Page 3
GT10Q101
Manufacturer Part Number
GT10Q101
Description
IGBT, 1200V, TO-3P(N)
Manufacturer
Toshiba
Specifications of GT10Q101
Transistor Type
IGBT
Dc Collector Current
10A
Collector Emitter Voltage Vces
2.7V
Power Dissipation Max
140W
Collector Emitter Voltage V(br)ceo
1.2kV
Transistor Case Style
TO-3P
No. Of Pins
3
Current Ic
RoHS Compliant
Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Package Type
TO-3PN
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Power Dissipation Pd
140W
Rohs Compliant
Yes
Svhc
No SVHC
Lead Free Status / Rohs Status
Not Compliant
20
16
12
20
16
12
20
16
12
8
4
0
8
4
0
8
4
0
0
0
0
Common emitter
V CE = 5 V
Common emitter
Tc = 25°C
Collector-emitter voltage V
Tc = 125°C
4
Gate-emitter voltage V
Gate-emitter voltage V
1
4
I C = 4 A
25
20
V
8
2
8
I
I
CE
C
C
– V
– V
−40
– V
10
CE
GE
15
GE
12
12
3
20
13
Common emitter
Tc = 25°C
GE
GE
CE
V GE = 10 V
(V)
(V)
16
16
4
(V)
12
20
20
5
3
20
16
12
20
16
12
4
3
2
1
0
−60
8
4
0
8
4
0
0
0
Common emitter
Tc = 125°C
Common emitter
V GE = 15 V
Tc = −40°C
Common emitter
−20
Gate-emitter voltage V
Gate-emitter voltage V
4
4
Case temperature Tc (°C)
I C = 4 A
I C = 4 A
V
V
V
20
CE (sat)
8
8
CE
CE
– V
– V
10
10
GE
– Tc
GE
12
12
60
20
GE
GE
20
(V)
(V)
100
16
16
I C = 4 A
GT10Q101
20
10
2006-10-31
140
20
20